WMM26N65C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMM26N65C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO263
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WMM26N65C4 Datasheet (PDF)
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Otros transistores... WMK26N60C4 , WMN26N60C4 , WMM26N60C4 , WMO26N60C4 , WMJ26N60C4 , WML26N65C4 , WMK26N65C4 , WMN26N65C4 , 20N60 , WMO26N65C4 , WMJ26N65C4 , WML28N60C4 , WMK28N60C4 , WMN28N60C4 , WMM28N60C4 , WMJ28N60C4 , WFD2N65L .
History: SM4066CSU4 | WSF3087 | WML53N65F2 | TK65L60V | BSP220 | SM4382NSKP | TK42A12N1
History: SM4066CSU4 | WSF3087 | WML53N65F2 | TK65L60V | BSP220 | SM4382NSKP | TK42A12N1



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