WTM3401 Todos los transistores

WTM3401 -30V/-4.2A P Channel Advanced Power MOSFET Features V R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V -3.3V Logic Level Control 55m @-10V P Channel SOT23 Package -30V -4.2A 65m @ -4.5V Pb-Free, RoHS Compliant Applications Load Switch Switching circuits High-speed line driver Power Management Functions Order Information

WTM3400 N-Channel Enhancement Mode Power MOSFET Description The WTM3400 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 30V, lD = 5.8A R

WTM3415 Enhancement Mode Power MOSFET P-Channel Description The WTM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)