WTM3415 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WTM3415
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 165 pF
Resistencia entre drenaje y fuente RDS(on): 0.055 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET WTM3415
WTM3415 Datasheet (PDF)
wtm3415.pdf
WTM3415Enhancement Mode Power MOSFET P-Channel Description The WTM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4ASchematic diagram RDS(ON)
wtm3400.pdf
WTM3400N-Channel Enhancement Mode Power MOSFETDescription The WTM3400 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 30V, lD = 5.8AR
wtm3401.pdf
WTM3401-30V/-4.2A P Channel Advanced Power MOSFETFeaturesV R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V -3.3V Logic Level Control55m @-10V P Channel SOT23 Package -30V -4.2A 65m @ -4.5V Pb-Free, RoHS CompliantApplications Load Switch Switching circuits High-speed line driver Power Management Functions Order Information
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
