3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 V(BR)DSS RDS(ON)MAX ID SOT-23 Plastic-Encapsulate MOSFET 60m@-10V -30V -4.1A 87m@-4.5V Features SOT-23 High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2 RDS(ON) 48m (VGS =-10V)+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Paramete

IRFB3407ZPbFHEXFET Power MOSFETApplicationsVDSS75VDl Battery ManagementRDS(on) typ.5.0ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 6.4mGID (Silicon Limited)122ASBenefitsID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt RuggednessDl Fully Characterized Capacitance andAvalanche SOAl Enhanced b

2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3407 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute

Ordering number : ENN6997CPH3407N-Channel Silicon MOSFETCPH3407Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3407]2.90.150.430.051 21.9 1 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

Si3407DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET- 20 21 nC PWM Optimized0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9

SI3407Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -5

SMG3407-4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3407 uses advanced trench technology to 3A 2.70 3.10SBTop Viewprovide excellent on-resistance with low gate change. 2 1B 1.40 1.60The device is suitable for use as a load switch or inC 1.00 1.30PWM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN MARKING: 3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23-6L General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: R7 Maximum rati

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET SOT-23-3L ID V(BR)DSS RDS(on)MAX \60m@-10 V-4.1A-30V 87m@-4.5V1. GATE 2. SOURCE 3. DRAIN DGeneral Description The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for

AO340730V P-Channel Enhancement Mode MOSFETV = -30V DSR , VDS(ON) gs@-10V, I 4.1A

CEM3407LDual P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5.1A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 115m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2

FM120-M WILLASTHRUSE3407SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

WPM3407WPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETHttp://www.sh-willsemi.com DescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable foruse in DC-DC conversion applications. Standard Product3WPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V53 m @ -4.5

AO340730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -4.1Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

AO3407A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3407A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

Analog Power AM3407PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)34 @ VGS = -4.5V -5 Low thermal impedance-2048 @ VGS = -2.5V -3 Fast switching speedTypical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media PlayersDrain: 1,2,5,6

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

AFP3407S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3407AO3407P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3407 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -4.1 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com YW3407FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON) RDS(ON) (m) Typ VDSS ID Rugged and reliable 48@ VGS=-10V Simple drive requirement -30V -5.2A68 @ VGS=-4.5V SOT-23 package DDrain-Source Voltage VDS -30 VGate-Sourc

BRCS3407MC Rev.B Mar.-2017 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

SM3407PSQAP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-11A,DDDRDS(ON) = 17m (max.) @ VGS =-4.5VRDS(ON) = 25m (max.) @ VGS =-2.5VGSSRDS(ON) = 45m (max.) @ VGS =-1.8V S Reliable and RuggedDFN3.3x3.3A-8_EP Lead Free and Green Devices Available(RoHS Compliant)( 5,6,7,8 )DDDD HBM ESD protection level pass 2KVNote : The diode connected

Product specificationWPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETDescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable for3use in DC-DC conversion applications. Standard ProductWPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V pin connections : 53 m

Product specificationDMG3407SSNP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.

SEMICONDUCTORFTK3407LTECHNICAL DATAP-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.MARKING: R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit

SEMICONDUCTORFTK3407TECHNICAL DATADDESCRIPTIONThe FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.1A 3RDS(ON)

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -4.1 A1 2RDS(ON) 52m (VGS = -10V)D +0.1+0.050.95 -0.1 0.1 -0.01+0.1RDS(ON) 87m (VGS = -4.5V) 1.9 -0.11.Base1. Gate2.Emitter2. SourceG 3. Drain3.collectorS Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

SMD Type ICSMD Type TransistorsP-Channel Enhancement Mode Field Effect TransistorKO3407SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS (V) = -30VID =-4.1 A12RDS(ON) 52m (VGS = -10V)+0.1+0.050.95-0.1 0.1-0.01+0.1RDS(ON) 87m (VGS = -4.5V) 1.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2 RDS(ON) 48m (VGS =-10V)+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Paramete

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 48m (VGS =-10V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3407 HF (KO3407 HF)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

PPJA3407 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -30 V Current -3.8A Features RDS(ON) , VGS@-10V, ID@-3.8A

AiT Semiconductor Inc. AM3407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement -30V/-4.3A, R =44m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.0A, R =70m(typ.)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density c

Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.3A DS DR

Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS DR

Single P-channel MOSFETELM33407CA-SGeneral description Features ELM33407CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

Single P-channel MOSFETELM13407CA-SGeneral description Features ELM13407CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V)resistance. Rds(on)

GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)

-4.1A-30V3407P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA3407 uses advanced trench technology to provide excellent R ,low gateDS(on)charge.This device is suitable for use as a load switch or in PWMapplications.Standard Product KIA3407is Pb-free(meets ROHS&Sony 259 specifications).KIA3407 is a Green Product ordering option.

AO3407G P-CHANNEL MOSFET/P MOS Purpose:This device is suitable for use as a load switch or in PWM applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V DS I (T =25) -4.1 A D a I (T =70) -3.5 A D aI -20 A DMV 20 V GS P (

http://www.ncepower.comNCE3407ANCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3407A uses advanced trench technology to provideexcellent R , This device is suitable for use as a loadDS(ON)Gswitch or in PWM applications.General FeaturesS V = -30V,I = -4.3ADS DSchematic diagramR

Pb Free Producthttp://www.ncepower.com NCE3407NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3407AYNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3407AY uses advanced trench technology to provide Gexcellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

Pb Free Producthttp://www.ncepower.comNCE3407ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3407E uses advanced trench technology to provideexcellent R . This device is suitable for use as a loadDS(ON)switch or in PWM applications.It is ESD protected.General Features V = -30V,I = -4.3A Schematic diagramDS DR = 28m @ V =-10V (typ)DS(ON) GSR = 38m

SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

STP3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTION FEATUREThe STP3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =38m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =58m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell desig

SL3407P-Channel Power MOSFET DGeneral Features VDS = -30V,ID = -4.1A GRDS(ON)

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

RUMWUMW AO3407AUMW AO3407AUMW AO3407AP-Channel Enhancement MOSFETFeaturesSOT23 VDS (V) = -30VID = -4.1 ARDS(ON) 52m (VGS = -10V)RDS(ON) 87m (VGS = -4.5V)1. GATE 2. SOURCE D 3. DRAIN G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current Ta = 25 -4.1

AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

P-Channel MOSFET AS3407SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: B 7 A or B 7Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -30 VDSS

BM3407AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +20Drain Current (continuous)I -4.1 ADDrain Current (pulsed) I ADM-16Total Device Di

Eternal Semiconductor Inc.EV3407P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP50 @ VGS = -10 V, ID=-4.3A -30V -4.3A63 @ VGS = -4.5V, ID=-3.0AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM O

Plastic-Encapsulate MosfetsAO3407FEATURESP-Channel MOSFETThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device issuitable for use as a load switch or in PWM applications.DD1.Gate2.SourceSOT-23GG3.DrainSSAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage

HSS3407A P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSS3407A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),max 70 m and efficiency for most of the small power switching and load switch applications. ID -3.1 A The HSS3407A meet the RoHS and Green Product requirement, with full function reliability a

AO3407A P-Ch 30V Fast Switching MOSFETs Product Summary Description The AO3407A is the high cell density trenched P-V -30 V DSch MOSFETs, which provides excellent RDSON R 47 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I -4 A DThe AO3407A meet the RoHS and Green Product requirement with full function reliability a

AO3407 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel Advanced Power MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 43m@ -10V 1. GATE - 4.1A -30V 2. SOURCE 66m@ -4.5V 1 3. DRAIN 2 FEATURE APPLICATIONLow RDS(on) @VGS=-10V Load Switch-5V Logic Level ControlSwitching circuitsHigh-speed line driverPower Management FunctionsM

PJM3407PSAP Enhancement Field Effect TransistorSOT-23Features VDS=-30V, ID=-4.1ARDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge1. Gate 2.Source 3.DrainMarking: R7ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless ot

AO3407 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , VDS(ON) gs@-10V, I -4.1A

AO3407P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -30V/-4.1A, R =80m(MAX) @V = -10V.DS(ON) GS R = 100m(MAX) @V = -4.5V. . DS(ON) Super High dense cell design for extremely low R Reliable and RuggedSC-59 for Surface Mount PackageSOT-59Applications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless Ot

DATASHEETTechcodeP-Channel Enhancement Mode MOSFET TDM3407DESCRIPTIONTheTDM3407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES 40VPMOS RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-2 Plastic-Encapsulate MOSFETS3-3LTF3407P-Channel 30-V(D-S) MOSFETTF3407V(BR)DSS RDS(on)MAX IDSOT-23-3L0.050@-10V-30V -4.1A30.070@-4.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA79TF wAPPLICAT

AO3407SI2305AO3401SI2301SOT-23 Plastic-Encap sulate MOSFETSP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorSI2301General Description The BC3407 uses advanced trench techno

WST3407AP-Ch MOSFETProduct SummeryGeneral Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3Agate charge for most of the small power switching and load switch applications.Applications The WST3407A meet the RoHS and Green Product requirement with full

WST3407P-Ch MOSFETProduct SummeryGeneral Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8Afor most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu

SE3407P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =-30VDSoperation voltage. This device is suitable for R =40m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

SM3407P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = -10 V,ID=-4.3A -30V -4.3A 78 @ VGS = -4.5V,ID=-3.0A Features 1 Super high dense cell trench design for low RDS(on). 2 Rugged and reliable. 3 SOT-23 package 4 RoHS Compliant.SM3407 Pin Assignment & Symbol Ordering Information

AO3407www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

Si3407DV-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP

SMC3407Swww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

AM3407PEwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch

RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect

HM3407BP-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

HM3407AP-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

isc N-Channel MOSFET Transistor IRFB3407ZIIRFB3407ZFEATURESStatic drain-source on-resistance:RDS(on) 5.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a