TF2300 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TF2300
Código: C009T*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 16.8 nC
Tiempo de subida (tr): 14.5 nS
Conductancia de drenaje-sustrato (Cd): 144 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET TF2300
TF2300 Datasheet (PDF)
tf2300.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETTF2300N-Channel 20-V(D-S) MOSFETTF2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface
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Advance Technical InformationVDSS = 85 VIXTF230N085TTrenchMVTMID25 = 130 APower MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeISOPLUS i4-PakTM (5-lead) (IXTF)Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 85 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Tran
tf2301a.pdf
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tf2302a.pdf
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2305BTF2305B P-Channel 16-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.060@-4.5V-16V -4.0A30.080@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA5BTF wAPPLICATION
tf2302.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302TF2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad
tf2306.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2306N-Channel 30-V(D-S) MOSFETTF2306V(BR)DSS RDS(on)MAX IDSOT-230.057@ 10V330V3.6 A1.GATE0.094@ 4.5 V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitLead free product is acquiredMARKINGSurface mount packageA69TF wAPPLICATION
tf2301.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301TF2301 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.8A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount package-A1sHB wAPPLICATION
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
