SL100N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SL100N08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 60.9 nC
trⓘ - Tiempo de subida: 24.5 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SL100N08
SL100N08 Datasheet (PDF)
sl100n08.pdf
SL100N08N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)
sl100n03r.pdf
SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI
cbsl100.pdf
CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.
sl1002b.pdf
SL1002BN-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m
sl100.pdf
CEOCBOEBOA DCj stgCEOC BCBOC EEBOE CCBOCB EEBOEB CC CEC CEC BC BoboCB E
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KDW258P
History: KDW258P
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Recientemente añadidas las descripciónes de los transistores:
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