SL11N65CK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SL11N65CK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 101 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 54 pF
Resistencia entre drenaje y fuente RDS(on): 0.36 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET SL11N65CK
SL11N65CK Datasheet (PDF)
sl11n65cf sl11n65c sl11n65ck.pdf
SL11N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 300 m DS(ON)TYP New technology for high voltage device ID 11.5 A Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Swit
sl11n65c.pdf
SL11N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 300 m DS(ON)TYP New technology for high voltage device ID 11.5 A Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Swit
irfsl11n50a.pdf
PD- 91847AIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance
irfsl11n50apbf.pdf
PD- 95231IRFSL11N50APbF Lead-Free04/29/04Document Number: 91288 www.vishay.com1IRFSL11N50APbFDocument Number: 91288 www.vishay.com2IRFSL11N50APbFDocument Number: 91288 www.vishay.com3IRFSL11N50APbFDocument Number: 91288 www.vishay.com4IRFSL11N50APbFDocument Number: 91288 www.vishay.com5IRFSL11N50APbFDocument Number: 91288 www.vishay.com6IRFSL11
irfsl11n50.pdf
PD- 91847BIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFET Power MOSFETs from International Rectifierprovide the designer with the best combination of fast switching, ruggedizeddevice design, low
irfsl11n50a sihfsl11n50a.pdf
IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK
irfsl11n50apbf sihfsl11n50a.pdf
IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
