SL11N65C Todos los transistores

 ..1. Size:658K  slkor
 sl11n65cf sl11n65c sl11n65ck.pdf

SL11N65C N-Channel Super Junction Power MOSFET V 650 V DS Features R 300 m DS(ON)TYP New technology for high voltage device ID 11.5 A Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correction PFC Swit

 ..2. Size:658K  slkor
 sl11n65c.pdf

SL11N65C N-Channel Super Junction Power MOSFET V 650 V DS Features R 300 m DS(ON)TYP New technology for high voltage device ID 11.5 A Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correction PFC Swit

 9.1. Size:107K  international rectifier
 irfsl11n50a.pdf

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance

 9.2. Size:827K  international rectifier
 irfsl11n50apbf.pdf

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number 91288 www.vishay.com 1 IRFSL11N50APbF Document Number 91288 www.vishay.com 2 IRFSL11N50APbF Document Number 91288 www.vishay.com 3 IRFSL11N50APbF Document Number 91288 www.vishay.com 4 IRFSL11N50APbF Document Number 91288 www.vishay.com 5 IRFSL11N50APbF Document Number 91288 www.vishay.com 6 IRFSL11

 9.3. Size:111K  international rectifier
 irfsl11n50.pdf

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low

 9.4. Size:305K  vishay
 irfsl11n50a sihfsl11n50a.pdf

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

 9.5. Size:307K  vishay
 irfsl11n50apbf sihfsl11n50a.pdf

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK