SL130N04Q Todos los transistores

 ..1. Size:513K  slkor
 sl130n04q.pdf

SL130N04Q N-Channel Power MOSFET General Description Product Summary Very low on-resistance RDS(ON) VDS 40V Low Gate Charge ID 130A Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS =10V)

 9.1. Size:54K  intersil
 fsl130.pdf

FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 9.2. Size:136K  cdil
 csl13002.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13002 HIGH VOLTAGE SWITCHING TRANSISTOR TO-92 Plastic Package B C E Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 400 V VCBO Collec

 9.3. Size:110K  cdil
 csl13003.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTOR TO-92 Plastic Package B C E Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 600 V VCEO Collecto

 9.4. Size:169K  ape
 ap65sl130ar.pdf

AP65SL130AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achieve the

 9.5. Size:221K  ape
 ap65sl130ai.pdf

AP65SL130AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to a

 9.6. Size:205K  ape
 ap65sl130awl.pdf

AP65SL130AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to ac

 9.7. Size:166K  ape
 ap65sl130ap.pdf

AP65SL130AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achi

 9.8. Size:218K  ape
 ap65sl130di.pdf

AP65SL130DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130D series are from Advanced Power innovated design and silicon process technology to achieve t

 9.9. Size:202K  ape
 ap65sl130dp.pdf

AP65SL130DP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130D series are from Advanced Power innovated design and silicon process technology to achieve t

 9.10. Size:2205K  slkor
 sl13003.pdf

SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

 9.11. Size:2205K  slkor
 sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf

SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

 9.12. Size:596K  taitron
 tsl13003.pdf

Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case TO-92, Plastic Package Terminals Solderable per MIL-STD-202G, Method 208 Weight 0.18 gram Maximum Ratings (T =25 C unless note