SL130N04Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SL130N04QN-Channel Power MOSFET General Description Product Summary Very low on-resistance RDS(ON) VDS 40V Low Gate ChargeID 130A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)

FSL130D, FSL130R8A, 100V, 0.230 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13002HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageBCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 400 VVCBOCollec

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageBCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollecto

AP65SL130ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achieve the

AP65SL130AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to a

AP65SL130AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to ac

AP65SL130APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achi

AP65SL130DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

AP65SL130DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T =25C unless note