SL130N04Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SL130N04Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 125 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 130 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 45 nC
   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 1119 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0017 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET SL130N04Q

SL130N04Q Datasheet (PDF)

..1. Size:513K slkor
sl130n04q.pdf

SL130N04QN-Channel Power MOSFET General Description Product Summary Very low on-resistance RDS(ON) VDS 40V Low Gate ChargeID 130A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)

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fsl130.pdf

FSL130D, FSL130R8A, 100V, 0.230 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

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csl13002.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13002HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageBCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 400 VVCBOCollec

9.3. Size:110K cdil
csl13003.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageBCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollecto

9.4. Size:169K ape
ap65sl130ar.pdf

AP65SL130ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achieve the

9.5. Size:221K ape
ap65sl130ai.pdf

AP65SL130AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to a

9.6. Size:205K ape
ap65sl130awl.pdf

AP65SL130AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to ac

9.7. Size:166K ape
ap65sl130ap.pdf

AP65SL130APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achi

9.8. Size:218K ape
ap65sl130di.pdf

AP65SL130DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

9.9. Size:202K ape
ap65sl130dp.pdf

AP65SL130DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

9.10. Size:2205K slkor
sl13003.pdf

SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

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sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf

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tsl13003.pdf

Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T =25C unless note

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