SL2307 Todos los transistores

 ..1. Size:1022K  slkor
 sl2307.pdf

SL2307 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX Equivalent Circuit 60m @-10 V -4.1A -30V 87m @-4.5V SOT-23 General Description The SL2307 uses adva nced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN D Maximum ratings (Ta=25 unless otherwi

 9.1. Size:73K  intersil
 fsl230.pdf

FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 9.2. Size:410K  slkor
 sl2309.pdf

SL2309 P-Channel Power MOSFET General Features VDS =-60V,ID =-1.6A RDS(ON)

 9.3. Size:2205K  slkor
 sl2302m.pdf

SL2302M 20V N-Channel MOSFET Circuit diagram Product Summary V R I (BR)DSS DS(on)MAX D 110m @4.5V 20V 150m @2.5V 1.2A Feature Package Surface Mount Package N-Channel Switch with Low R (on) DS Operated at Low Logic Level Gate Drive ESD Protected Application SOT-723 Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portab

 9.4. Size:3256K  slkor
 sl2308.pdf

SL2308 60V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE 60V/1 . 8 A, RDS(ON) =1 35m (typ.)@VGS=1 0V The SL2308 is the N-Channel logic enhancement =1 54m (typ.)@VGS=4.5V 60V/ 1 ..5 A, R DS(ON) mode power field effect transistor is produced using Super high design for extremely low RDS(ON) high cell density advanced trench technology.. Exc

 9.5. Size:483K  slkor
 sl2300.pdf

SL2300 N-Channel Power MOSFET D General Features VDS = 20V,ID = 4.2A G RDS(ON)

 9.6. Size:503K  slkor
 sl2306.pdf

SL2306 N-Channel Power MOSFET MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BV 20 V DSS Gate- Source Voltage V +10 V GS Drain Current (continuous) I 4 A D Drain Current (pulsed) I 15 A DM Total Device Dissipation PD 1200 mW TA=25 Junction T 150 J Solder Temperature/Solder Time T/t 260/10 /

 9.7. Size:1387K  slkor
 sl2302s.pdf

SL2302S SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 www.slkormicro.com 3

 9.8. Size:441K  slkor
 sl2305.pdf

SL2305 P-Channel Power MOSFET D General Features G VDS = -20V,ID = -4.1A RDS(ON)

 9.9. Size:509K  slkor
 sl2301.pdf

SL2301 P-Channel Power MOSFET D General Features VDS = -20V,ID = -2.8A G RDS(ON)

 9.10. Size:1411K  slkor
 sl2301s.pdf

SL2301S SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 www.slkormicro.com 3

 9.11. Size:485K  slkor
 sl2302.pdf

SL2302 N-Channel Power MOSFET General Features VDS = 20V,ID = 2.8 A RDS(ON)

 9.12. Size:600K  slkor
 sl2304.pdf

SL2304 N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 60m @10V 30 V 3.3A 75m @4.5V FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain

 9.13. Size:616K  slkor
 sl2309a.pdf

SL2309A P-Channel 60-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID -60V 165m @ 10V -2.0A Equivalent Circuit FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter 1.GATE 2.SOURCE 3.DRAIN Absolute Maximum Ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 V