2N06L11P Todos los transistores

 ..1. Size:288K  inchange semiconductor
 2n06l11p.pdf

isc N-Channel MOSFET Transistor 2N06L11P FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 7.1. Size:282K  inchange semiconductor
 2n06l11k.pdf

isc N-Channel MOSFET Transistor 2N06L11K FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 7.2. Size:356K  inchange semiconductor
 2n06l11b.pdf

isc N-Channel MOSFET Transistor 2N06L11B FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.1. Size:170K  1
 std12n05l-1 std12n05lt4 std12n06l-1 std12n06lt4.pdf

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V

 9.2. Size:274K  philips
 php32n06lt php32n06lt phb32n06lt.pdf

PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Logic level compatible.

 9.3. Size:393K  st
 stp32n06l.pdf

STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP32N06L 60 V

 9.4. Size:255K  njs
 rfl2n05l rfl2n06l rfp4n05l rfp4n06l.pdf

 9.5. Size:851K  nxp
 phb32n06lt.pdf

PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature

 9.6. Size:1180K  infineon
 bsc112n06ld.pdf

BSC112N06LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Superior Thermal Resistance Halogen-free according to IEC61249-2-21 Product Va

 9.7. Size:683K  infineon
 ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf

pe IPB049N06L3 G IPP052N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E

 9.8. Size:98K  onsemi
 ntd32n06l ntd32n06l ntd32n06lg.pdf

NTD32N06L Power MOSFET 32 Amps, 60 Volts Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. VDSS RDS(ON) TYP ID MAX Features Smaller Package than MTB30N06VL 60 V 23.7 mW 32 A Lower RDS(on), VDS(on), and Total Gate Charge Lower and Tighter

 9.9. Size:194K  onsemi
 ntp22n06l.pdf

NTP22N06L, NTB22N06L Power MOSFET 22 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. Typical Applications 22 AMPERES Power Supplies 60 VOLTS Converters Power Motor Controls RDS(on) = 65 m Bridge Circuits

 9.10. Size:1115K  belling
 blp02n06l-d.pdf

BLP02N06L MOSFET Step-Down Converter , 1 Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 9.11. Size:694K  belling
 blp02n06l-q.pdf

BLP02N06L MOSFET Step-Down Converter , 1 Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 9.12. Size:1847K  cn vbsemi
 ipp052n06l3.pdf

IPP052N06L3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002

 9.13. Size:288K  inchange semiconductor
 2n06l07p.pdf

isc N-Channel MOSFET Transistor 2N06L07P FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max)@V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.14. Size:245K  inchange semiconductor
 ipp052n06l3.pdf

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 FEATURES Static drain-source on-resistance RDS(on) 4.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(

 9.15. Size:356K  inchange semiconductor
 2n06l09b.pdf

isc N-Channel MOSFET Transistor 2N06L09B FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

 9.16. Size:288K  inchange semiconductor
 2n06l09p.pdf

isc N-Channel MOSFET Transistor 2N06L09P FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

 9.17. Size:356K  inchange semiconductor
 2n06l07b.pdf

isc N-Channel MOSFET Transistor 2N06L07B FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB