2SK2820 Todos los transistores

 ..1. Size:907K  1
 2sk2820.pdf

 ..2. Size:286K  inchange semiconductor
 2sk2820.pdf

isc N-Channel MOSFET Transistor 2SK2820 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =4V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.1. Size:44K  1
 2sk2828.pdf

2SK2828 Silicon N Channel MOS FET High Speed Power Switching ADE-208-514 C (Z) 4th. Edition Feb 1999 Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC DC converter Avalanche ratings Outline TO 3P D 2 1 G 1. Gate 2. Drain 1 2 (Flange) 3 3 3. Source S 2SK2828 Abs

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 2sk2821.pdf

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 2sk2827-01.pdf

FUJI POWER MOSFET 2SK2827-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (

 8.4. Size:80K  1
 2sk2826.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK2826 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK2826 TO-220AB 2SK2826-S TO-262 FEATURES 2SK2826-ZJ TO-263 Super Low On-state Resistance Note 2SK2826-Z TO-220SMD RDS(on)

 8.5. Size:325K  toshiba
 2sk2823.pdf

2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment Unit mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage V = 0.5 1.0 V th Small package Marking Equivalent Circuit JEDEC TO-236MOD Maximum Ratings (Ta = = 25 C) = = JEITA SC-5

 8.6. Size:304K  toshiba
 2sk2824.pdf

2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage V = 0.5 1.0 V th Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 TO

 8.7. Size:300K  toshiba
 2sk2825.pdf

2SK2825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment Unit mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage V = 0.5 1.0 V th Small package Marking Equivalent Circuit Maximum Ratings (Ta = = 25 C) = = JEDEC JEITA Cha

 8.8. Size:286K  inchange semiconductor
 2sk2821.pdf

isc N-Channel MOSFET Transistor 2SK2821 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =4V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.9. Size:289K  inchange semiconductor
 2sk2827.pdf

isc N-Channel MOSFET Transistor 2SK2827 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:280K  inchange semiconductor
 2sk2826.pdf

isc N-Channel MOSFET Transistor 2SK2826 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid