2SK2875-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2875-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK2875-01

2SK2875-01 Datasheet (PDF)

..1. Size:77K 1
2sk2875-01.pdf

FUJI POWER MOSFET2SK2875-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(

..2. Size:288K inchange semiconductor
2sk2875-01.pdf

isc N-Channel MOSFET Transistor 2SK2875-01FEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.1. Size:89K 1
2sk2874-01l 2sk2874-01s.pdf

FUJI POWER MOSFET2SK2874-01L,SN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesT-pack (S)T-pack (L)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent cir

8.2. Size:78K 1
2sk2877-01.pdf

FUJI POWER MOSFET2SK2877-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=

8.3. Size:78K 1
2sk2871-01.pdf

FUJI POWER MOSFET2SK2871-01N-CHANNEL SILICON POWER MOSFETFAP-2S SeriesOutline DrawingsTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(

8.4. Size:79K 1
2sk2873-01.pdf

FUJI POWER MOSFET2SK2873-01N-CHANNEL SILICON POWER MOSFETFAP-2S SeriesOutline DrawingsTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=

8.5. Size:268K 1
2sk2870-01l 2sk2870-01s.pdf

2SK2870-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIS SERIESOutline DrawingsFeaturesHigh speed switching T-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent circuit

8.6. Size:248K fuji
2sk2879-01.pdf

N-channel MOS-FET2SK2879-01FAP-IIS Series 500V 0,38 20A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characte

8.7. Size:245K fuji
2sk2876-01mr.pdf

N-channel MOS-FET2SK2876-01MRFAP-IIS Series 500V 1,5 6A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character

8.8. Size:236K fuji
2sk2872.pdf

N-channel MOS-FET2SK2872-01MRFAP-IIS Series 450V 1,2 8A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character

8.9. Size:286K inchange semiconductor
2sk2879-01.pdf

isc N-Channel MOSFET Transistor 2SK2879-01FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.10. Size:286K inchange semiconductor
2sk2877-01.pdf

isc N-Channel MOSFET Transistor 2SK2877-01FEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.11. Size:289K inchange semiconductor
2sk2871-01.pdf

isc N-Channel MOSFET Transistor 2SK2871-01FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.12. Size:279K inchange semiconductor
2sk2876-01mr.pdf

isc N-Channel MOSFET Transistor 2SK2876-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.13. Size:354K inchange semiconductor
2sk2870l.pdf

isc N-Channel MOSFET Transistor 2SK2870LFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.14. Size:286K inchange semiconductor
2sk2870s.pdf

isc N-Channel MOSFET Transistor 2SK2870SFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.15. Size:286K inchange semiconductor
2sk2873-01.pdf

isc N-Channel MOSFET Transistor 2SK2873-01FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.16. Size:354K inchange semiconductor
2sk2874-01l.pdf

isc N-Channel MOSFET Transistor 2SK2874-01LFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.17. Size:280K inchange semiconductor
2sk2872-01mr.pdf

isc N-Channel MOSFET Transistor 2SK2872-01MRFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.18. Size:286K inchange semiconductor
2sk2874-01s.pdf

isc N-Channel MOSFET Transistor 2SK2874-01SFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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