2SK2875-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2875-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 35 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Tiempo de subida (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK2875-01
2SK2875-01 Datasheet (PDF)
2sk2875-01.pdf
FUJI POWER MOSFET2SK2875-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(
2sk2875-01.pdf
isc N-Channel MOSFET Transistor 2SK2875-01FEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk2874-01l 2sk2874-01s.pdf
FUJI POWER MOSFET2SK2874-01L,SN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesT-pack (S)T-pack (L)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent cir
2sk2877-01.pdf
FUJI POWER MOSFET2SK2877-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=
2sk2871-01.pdf
FUJI POWER MOSFET2SK2871-01N-CHANNEL SILICON POWER MOSFETFAP-2S SeriesOutline DrawingsTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(
2sk2873-01.pdf
FUJI POWER MOSFET2SK2873-01N-CHANNEL SILICON POWER MOSFETFAP-2S SeriesOutline DrawingsTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=
2sk2870-01l 2sk2870-01s.pdf
2SK2870-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIS SERIESOutline DrawingsFeaturesHigh speed switching T-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent circuit
2sk2879-01.pdf
N-channel MOS-FET2SK2879-01FAP-IIS Series 500V 0,38 20A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characte
2sk2876-01mr.pdf
N-channel MOS-FET2SK2876-01MRFAP-IIS Series 500V 1,5 6A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character
2sk2872.pdf
N-channel MOS-FET2SK2872-01MRFAP-IIS Series 450V 1,2 8A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character
2sk2879-01.pdf
isc N-Channel MOSFET Transistor 2SK2879-01FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk2877-01.pdf
isc N-Channel MOSFET Transistor 2SK2877-01FEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk2871-01.pdf
isc N-Channel MOSFET Transistor 2SK2871-01FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk2876-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2876-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk2870l.pdf
isc N-Channel MOSFET Transistor 2SK2870LFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2870s.pdf
isc N-Channel MOSFET Transistor 2SK2870SFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2873-01.pdf
isc N-Channel MOSFET Transistor 2SK2873-01FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk2874-01l.pdf
isc N-Channel MOSFET Transistor 2SK2874-01LFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk2872-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2872-01MRFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk2874-01s.pdf
isc N-Channel MOSFET Transistor 2SK2874-01SFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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