ZVP0540A Todos los transistores

 

ZVP0540A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVP0540A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.045 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 150 Ohm
   Paquete / Cubierta: ELINE

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ZVP0540A Datasheet (PDF)

 ..1. Size:25K  diodes
zvp0540a.pdf

ZVP0540A

P-CHANNEL ENHANCEMENTZVP0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V

 8.1. Size:40K  diodes
zvp0545astoa zvp0545astob zvp0545astz.pdf

ZVP0540A

P-CHANNEL ENHANCEMENTZVP0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V

 8.2. Size:40K  diodes
zvp0545gta zvp0545gtc.pdf

ZVP0540A

SOT223 P-CHANNEL ENHANCEMENTZVP0545GMODE VERTICAL DMOS FETISSUE 1 MARCH 98FEATURES* 450 Volt VDSD* RDS(on)=150SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS -450 VContinuous Drain Current at Tamb=25C ID -75 mAPulsed Drain Current IDM -400 mAGate Source Voltage VGS 20 VPower Dissipation at Tamb=25C Ptot 2WOperatin

 8.3. Size:45K  diodes
zvp0545g.pdf

ZVP0540A
ZVP0540A

SOT223 P-CHANNEL ENHANCEMENTZVP0545GMODE VERTICAL DMOS FETISSUE 1 MARCH 98FEATURES* 450 Volt VDSD* RDS(on)=150SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS -450 VContinuous Drain Current at Tamb=25C ID -75 mAPulsed Drain Current IDM -400 mAGate Source Voltage VGS 20 VPower Dissipation at Tamb=25C Ptot 2WOperatin

 8.4. Size:54K  diodes
zvp0545a.pdf

ZVP0540A

P-CHANNEL ENHANCEMENTZVP0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V

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