2SK2884B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2884B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de 2SK2884B MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2884B datasheet
..1. Size:357K inchange semiconductor
2sk2884b.pdf 
isc N-Channel MOSFET Transistor 2SK2884B FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
7.1. Size:427K toshiba
2sk2884.pdf
2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Y = 3.8 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I =
7.2. Size:283K inchange semiconductor
2sk2884k.pdf
isc N-Channel MOSFET Transistor 2SK2884K FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.1. Size:417K toshiba
2sk2889.pdf
2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V
8.2. Size:430K toshiba
2sk2883.pdf
2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4
8.3. Size:423K toshiba
2sk2886.pdf
2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 14 m (typ.) (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 0.8 2.0 V (V
8.6. Size:139K rohm
2sk2887.pdf
Transistors Switching (200V, 3A) 2SK2887 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 16
8.7. Size:34K hitachi
2sk2885l-s.pdf
2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr
8.8. Size:38K hitachi
2sk2885.pdf
2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr
8.9. Size:114K isahaya
2sk2880.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.10. Size:103K isahaya
2sk2881.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw
8.11. Size:282K inchange semiconductor
2sk2885l.pdf
isc N-Channel MOSFET Transistor 2SK2885L FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.12. Size:356K inchange semiconductor
2sk2889b.pdf
isc N-Channel MOSFET Transistor 2SK2889B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.13. Size:286K inchange semiconductor
2sk2887.pdf
isc N-Channel MOSFET Transistor 2SK2887 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.14. Size:234K inchange semiconductor
2sk2886.pdf
isc N-Channel MOSFET Transistor 2SK2886 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL VALU
8.15. Size:356K inchange semiconductor
2sk2885s.pdf
isc N-Channel MOSFET Transistor 2SK2885S FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.16. Size:282K inchange semiconductor
2sk2889k.pdf
isc N-Channel MOSFET Transistor 2SK2889K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.17. Size:283K inchange semiconductor
2sk2883k.pdf
isc N-Channel MOSFET Transistor 2SK2883K FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.18. Size:357K inchange semiconductor
2sk2883b.pdf
isc N-Channel MOSFET Transistor 2SK2883B FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.19. Size:279K inchange semiconductor
2sk2882.pdf
isc N-Channel MOSFET Transistor 2SK2882 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK2871-01, 2SK2873-01, 2SK2874-01L, 2SK2874-01S, 2SK2875-01, 2SK2877-01, 2SK2883B, 2SK2883K, 2SK3878, 2SK2884K, 2SK2889B, 2SK2889K, 2SK2890-01, 2SK3026, 2SK3027, 2SK3028, 2SK3029
