2SK2889B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK2889BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.54 (typ.) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V

isc N-Channel MOSFET Transistor 2SK2889KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 14 m (typ.) (ON) High forward transfer admittance : |Y | = 31 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V (V

2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.9 (typ.) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I =

TransistorsSwitching (200V, 3A)2SK2887FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications16

2SK2885(L), 2SK2885(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-545 A2nd. EditionFeatures Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineLDPAK4 4D123123G 1. Gate2. Drain3. Source4. DrainS2SK2885(L), 2SK2885(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDr

2SK2885(L), 2SK2885(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-545 A2nd. EditionFeatures Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineLDPAK4 4D123123G 1. Gate2. Drain3. Source4. DrainS2SK2885(L), 2SK2885(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDr

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw

isc N-Channel MOSFET Transistor 2SK2885LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2887FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2886DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL VALU

isc N-Channel MOSFET Transistor 2SK2884BFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK2885SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2884KFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK2883KFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK2883BFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK2882FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid