2SK3095LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3095LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 2SK3095LS
2SK3095LS Datasheet (PDF)
2sk3095ls.pdf
Ordering number : EN86242SK3095LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3095LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
2sk3095ls.pdf
isc N-Channel MOSFET Transistor 2SK3095LSFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3093ls.pdf
Ordering number : EN86222SK3093LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3093LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
2sk3099ls.pdf
Ordering number : EN86282SK3099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3099LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
2sk3090.pdf
2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 16 m (typ.) High forward transfer admittance : |Yfs| = 26 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 30 V) Enhancement mode : Vth = 1.5~3.0 V (VDS =
2sk3096.pdf
www.DataSheet.co.krOrdering number : EN86252SK3096SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3096ApplicationsFeatures Low ON-resistance. High-speed switching. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source
2sk3094.pdf
www.DataSheet.co.krOrdering number : EN86232SK3094SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3094ApplicationsFeatures High-speed switching. Low ON-resistance. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source
2sk3098.pdf
Ordering number : EN86272SK3098SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3098ApplicationsFeatures Low ON-resistance. High-speed switching. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 V
2sk3092.pdf
Ordering number : ENN67882SK3092N-Channel Silicon MOSFET2SK3092Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Low Qg. 2083B[2SK3092]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPPackage Dimensionsunit : mm2092B[2SK3092]6.5 2.35.0 0.540.
2sk3092d.pdf
isc N-Channel MOSFET Transistor 2SK3092DFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3096.pdf
isc N-Channel MOSFET Transistor 2SK3096FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO
2sk3094.pdf
isc N-Channel MOSFET Transistor 2SK3094FEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3090k.pdf
isc N-Channel MOSFET Transistor 2SK3090KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3093ls.pdf
isc N-Channel MOSFET Transistor 2SK3093LSFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3098.pdf
isc N-Channel MOSFET Transistor 2SK3098FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3099ls.pdf
isc N-Channel MOSFET Transistor 2SK3099LSFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
2sk3092i.pdf
isc N-Channel MOSFET Transistor 2SK3092IFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3090b.pdf
isc N-Channel MOSFET Transistor 2SK3090BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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