4420 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4420N-Channel Enhancement Mode Power MOSFET SO-8LDDDDescription DThe 4420 uses advanced trench technology to provide GGSexcellent RDS(ON) and low gate charge . The complementary S SSSSO-8 SPin 1MOSFETs may be used to form a level shifted high side switch, and for a host o

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

January 2000Si4420DY*Single N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processRDS(ON) = 0.013 W @ VGS = 4.5 Vthat has been especially tailored to minimize on-stateresistance and yet maintain superior switc

June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of N-Channel Logic Level MOSFETs11 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V,have been designed to provide a low profile, small footprintRDS(ON) = 0.013 @ VGS = 4.5 V.alternative to industry standard SO-8 little foot type product.Fast switching speed.

PBSS4420D20 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 24 September 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

Si4420DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.009 @ VGS = 10 V 13.530300.013 @ VGS = 4.5 V 11DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SOrdering Information: Si4420DYN-Channel MOSFETSi4420DY-T1 (with Tape and Reel)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

Si4420BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET300.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8DS1 8 DS D2 7S3 6 DG D4 5GTop ViewSOrdering Information:Si4420BDY-T1-E3 (Lea

PD - 95729Si4420DYPbFHEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DVDSS = 30Vl Low Gate Charge2 7S Dl Surface Mount3 6S Dl Logic Level Drive4 5l Lead-Free G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-res

Power Transistors2SC4420Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

AO442030V N-Channel MOSFETGeneral Description Product SummaryThe AO4420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

AO4420A30V N-Channel MOSFETGeneral Description Product SummaryThe AO4420A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

AP4420GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52AS RoHS CompliantDescriptionThe Advanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H

Analog Power AM4420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2.3 @ VGS = 4.5V30 Low thermal impedance 202.7 @ VGS = 2.5V28 Fast switching speed Typical Applications: SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

APM4420N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS 1 8 D 30V/12.5A, RDS(ON)=6m(typ.) @ VGS=10VRDS(ON)=10m(typ.) @ VGS=4.5VS 2 7 D Super High Dense Cell Design for S 3 6 DExtremely Low RDS(ON)G 45 D Reliable and Rugged SO-8 Package SO - 8DApplications Power Management i

SMD Type MOSFETN-Channel MOSFETAO4420 (KO4420)SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V)1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G

AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m@V = 10V DS(ON) GSmode power field effect transistor are produced 30V/12A, R = 12m@V = 4.5V DS(ON) GSusing high cell density, This high density process Super high density cell design for extremely low

Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)

SMC4420 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC4420 is the N-Channel logic enhancement 30V/14A, RDS(ON) =10m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/12A, RDS(ON) =12m(typ.)@VGS =4.5V high cell density. advanced trench technology to Super high density cell design for extremely low provide excellent

AO4420www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8

SI4420DYwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS

VBZA4420www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.013at VGS = - 10 V - 10 100 % Rg TestedRoHS- 30 18 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6