4420 Todos los transistores

 ..1. Size:3678K  cn tuofeng
 4420.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4420 N-Channel Enhancement Mode Power MOSFET SO-8L D D D Description D The 4420 uses advanced trench technology to provide G G S excellent RDS(ON) and low gate charge . The complementary S S S S SO-8 S Pin 1 MOSFETs may be used to form a level shifted high side switch, and for a host o

 0.1. Size:111K  international rectifier
 si4420dy.pdf

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate

 0.2. Size:281K  fairchild semi
 si4420dy.pdf

January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 W @ VGS = 4.5 V that has been especially tailored to minimize on-state resistance and yet maintain superior switc

 0.3. Size:211K  fairchild semi
 fdr4420a.pdf

June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of N-Channel Logic Level MOSFETs 11 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.013 @ VGS = 4.5 V. alternative to industry standard SO-8 little foot type product. Fast switching speed.

 0.4. Size:116K  nxp
 pbss4420d.pdf

PBSS4420D 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 24 September 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5420D. 1.2 Features Very low collector-emitter saturation resistance Ultra low collect

 0.5. Size:106K  vishay
 si4420dytr.pdf

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate

 0.6. Size:58K  vishay
 si4420dy.pdf

Si4420DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.009 @ VGS = 10 V 13.5 30 30 0.013 @ VGS = 4.5 V 11 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S Ordering Information Si4420DY N-Channel MOSFET Si4420DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

 0.7. Size:248K  vishay
 si4420bdy.pdf

Si4420BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET 30 0.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4420BDY-T1-E3 (Lea

 0.8. Size:114K  vishay
 si4420dypbf si4420dytrpbf.pdf

PD - 95729 Si4420DYPbF HEXFET Power MOSFET l N-Channel MOSFET A A l Low On-Resistance 1 8 S D VDSS = 30V l Low Gate Charge 2 7 S D l Surface Mount 3 6 S D l Logic Level Drive 4 5 l Lead-Free G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-res

 0.9. Size:82K  panasonic
 2sc4420.pdf

Power Transistors 2SC4420 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea

 0.10. Size:148K  aosemi
 aon4420.pdf

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON)

 0.11. Size:165K  aosemi
 ao4420.pdf

AO4420 30V N-Channel MOSFET General Description Product Summary The AO4420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 13.7A (VGS = 10V) and body diode characteristics. This device is RDS(ON)

 0.12. Size:147K  aosemi
 aon4420l.pdf

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON)

 0.13. Size:165K  aosemi
 ao4420a.pdf

AO4420A 30V N-Channel MOSFET General Description Product Summary The AO4420A uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 13.7A (VGS = 10V) and body diode characteristics. This device is RDS(ON)

 0.14. Size:93K  ape
 ap4420gh ap4420gj.pdf

AP4420GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52A S RoHS Compliant Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H

 0.15. Size:317K  analog power
 am4420n.pdf

Analog Power AM4420N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2.3 @ VGS = 4.5V 30 Low thermal impedance 20 2.7 @ VGS = 2.5V 28 Fast switching speed Typical Applications SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

 0.16. Size:140K  anpec
 apm4420.pdf

APM4420 N-Channel Enhancement Mode MOSFET Features Pin Description S 1 8 D 30V/12.5A, RDS(ON)=6m (typ.) @ VGS=10V RDS(ON)=10m (typ.) @ VGS=4.5V S 2 7 D Super High Dense Cell Design for S 3 6 D Extremely Low RDS(ON) G 45 D Reliable and Rugged SO-8 Package SO - 8 D Applications Power Management i

 0.17. Size:1448K  kexin
 ao4420.pdf

SMD Type MOSFET N-Channel MOSFET AO4420 (KO4420) SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V) 1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V G

 0.18. Size:308K  ait semi
 am4420.pdf

AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m @V = 10V DS(ON) GS mode power field effect transistor are produced 30V/12A, R = 12m @V = 4.5V DS(ON) GS using high cell density, This high density process Super high density cell design for extremely low

 0.19. Size:390K  elm
 elm14420aa.pdf

Single N-channel MOSFET ELM14420AA-N General description Features ELM14420AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V) resistance. Rds(on)

 0.20. Size:380K  semtron
 smc4420.pdf

SMC4420 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC4420 is the N-Channel logic enhancement 30V/14A, RDS(ON) =10m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/12A, RDS(ON) =12m (typ.)@VGS =4.5V high cell density. advanced trench technology to Super high density cell design for extremely low provide excellent

 0.21. Size:834K  cn vbsemi
 ao4420.pdf

AO4420 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8

 0.22. Size:943K  cn vbsemi
 si4420dy.pdf

SI4420DY www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to RoHS

 0.23. Size:1442K  cn vbsemi
 vbza4420.pdf

VBZA4420 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.013at VGS = - 10 V - 10 100 % Rg Tested RoHS - 30 18 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6