7410 Todos los transistores

 ..1. Size:3599K  cn tuofeng
 7410.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N-Channel Enhancement Mode Power MOSFET 7410 30V N-Channel MOSFET DFN 3x3_EP PRODUCT SUMMARY Top View Bottom View VDS (V) = 30V ID =24A RDS(ON)

 0.1. Size:338K  1
 aon7410.pdf

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)

 0.2. Size:4276K  1
 jsm7410.pdf

JSM7410 N-Channel Enhancement Mode Power MOSFET 30V N-Channel MOSFET DFN 3x3_EP PRODUCT SUMMARY Top View Bottom View VDS (V) = 30V ID =24A RDS(ON)

 0.3. Size:195K  international rectifier
 irf7410pbf-1.pdf

IRF7410TRPbF-1 HEXFET Power MOSFET VDS -12 V A 1 8 S D RDS(on) max 7 2 7 (@V = -4.5V) D GS S RDS(on) max 3 6 S 9 m D (@V = -2.5V) GS 4 5 G D RDS(on) max 13 (@V = -1.8V) GS SO-8 Top View Qg (typical) 91 nC ID -16 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount T

 0.4. Size:208K  international rectifier
 irf7410gpbf.pdf

PD - 96247 IRF7410GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free l Halogen-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing

 0.5. Size:102K  international rectifier
 irf7410.pdf

PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m @VGS = -4.5V -16A Surface Mount 9m @VGS = -2.5V -13.6A Available in Tape & Reel 13m @VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extrem

 0.6. Size:210K  international rectifier
 irf7410pbf.pdf

PD - 96028B IRF7410PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques

 0.7. Size:464K  central
 ctlm3410-ctlm7410-ctlm3474-m832d.pdf

CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL, LOW VCE (SAT) The CENTRAL SEMICONDUCTOR CTLM3410-M832D SILICON TRANSISTORS (Dual NPN), CTLM7410-M832D (Dual PNP), and CTLM3474-M832D (Complementary NPN & PNP) are Low VCE(SAT) Transistors packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLM ) surface mount

 0.8. Size:403K  central
 ctlm3410 ctlm7410 ctlm3474-m832d.pdf

CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL, LOW VCE (SAT) The CENTRAL SEMICONDUCTOR CTLM3410- SILICON TRANSISTORS M832D (Dual NPN), CTLM7410-M832D (Dual PNP), and CTLM3474-M832D (Complementary NPN & PNP) are Low VCE(SAT) Transistors packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLM ) surface mount

 0.9. Size:342K  central
 cmut7410.pdf

CMUT3410 NPN CMUT7410 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY LOW VCE(SAT) The CENTRAL SEMICONDUCTOR CMUT3410, and SILICON TRANSISTORS CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for small signal general purpose amplifier and switching applications, requiring low collector emitter saturation voltage.

 0.10. Size:388K  central
 cmpt7410.pdf

CMPT7410 www.centralsemi.com SURFACE MOUNT LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT7410 type PNP SILICON TRANSISTOR is a PNP Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT). MARKING

 0.11. Size:401K  central
 cmst7410.pdf

CMST3410 NPN CMST7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORS CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and

 0.12. Size:451K  central
 cmlt7410.pdf

CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION DUAL, LOW VCE(SAT) These CENTRAL SEMICONDUCTOR dual devices TRANSISTORS are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal general purpose amplifier and switching applications requiring low collector emitter saturation voltage. MARKIN

 0.13. Size:653K  central
 ctlt3410-ctlt7410-m621.pdf

CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION LOW VCE(SAT) The CENTRAL SEMICONDUCTOR CTLT3410-M621 SILICON TRANSISTORS and CTLT7410-M621 are Low VCE(SAT) transistors in a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime

 0.14. Size:286K  central
 cxt3410 cxt7410.pdf

CXT3410 NPN CXT7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CXT3410 and SILICON TRANSISTORS CXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operation

 0.15. Size:198K  diodes
 dmg7410sfg.pdf

DMG7410SFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) TA = 25 C Small form factor thermally efficient package enables higher 20m @ VGS = 10V 8.0 A density end products 30V 27m @ VGS = 4.5V 6.5 A Occupies just 33% of the board area occupied by SO-8

 0.16. Size:280K  utc
 ut7410.pdf

UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. The UTC UT7410 is suitable for Load Switch and DC-DC converters applications, etc. FEATURES

 0.17. Size:52K  intersil
 jansr2n7410.pdf

JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, March 1998 N-Channel Power MOSFET Features Description 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 0.18. Size:338K  aosemi
 aon7410.pdf

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)

 0.19. Size:230K  aosemi
 ao7410.pdf

AO7410 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)

 0.20. Size:323K  analog power
 am7410n.pdf

Analog Power AM7410N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 15 @ VGS = 10V 15 Low thermal impedance 100 19 @ VGS = 5.5V 14 Fast switching speed DFN5X6-8L Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 0.21. Size:67K  kexin
 krf7410.pdf

SMD Type IC SMD Type IC HEXFET Power MOSFET KRF7410 Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain- Source Voltage VDS -20 V Continuous Drain Current, VGS @ -4.5V @ Ta =25 ID -16 Continuous Drain Current, VGS @ -4.5V @ Ta =70 ID -13 A Pulsed Drain Current *1 IDM -65 Power

 0.22. Size:798K  cn vbsemi
 irf7410tr.pdf

IRF7410TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S