7430 Todos los transistores

 ..1. Size:3356K  cn tuofeng
 7430.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N-Channel Enhancement Mode Power MOSFET 7430 30V N-Channel MOSFET DFN 3x3_EP PRODUCT SUMMARY Top View Bottom View VDS (V) = 30V ID = 34A (VGS = 10V) RDS(ON)

 0.1. Size:542K  international rectifier
 irfs7430-7ppbf.pdf

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D PWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75m G max Electronic ballast applications ID (Silicon Limited) 52

 0.2. Size:298K  international rectifier
 irfs7430pbf irfsl7430pbf.pdf

StrongIRFET IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications VDSS 40V D l Brushed motor drive applications RDS(on) typ. 0.97m l BLDC motor drive applications l Battery powered circuits max. 1.2m G l Half-bridge and full-bridge topologies 426A ID (Silicon Limited) l Synchronous rectifier applications S ID (Package Limited) 195A l Resonant mode power supplies l O

 0.3. Size:257K  international rectifier
 irfp7430pbf.pdf

StrongIRFETTM IRFP7430PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications l BLDC Motor drive applications D VDSS 40V l Battery powered circuits RDS(on) typ. 1.0m l Half-bridge and full-bridge topologies max. 1.3m l Synchronous rectifier applications G l Resonant mode power supplies ID (Silicon Limited) 404A l OR-ing and redundant power switches S ID

 0.4. Size:126K  international rectifier
 irhf7430se.pdf

PD - 91863B IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL RADIATION HARDENED REF MIL-PRF-19500/676 POWER MOSFET RAD Hard HEXFET TECHNOLOGY THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHF7430SE 100K Rads (Si) 1.65 2.6A JANSR2N7464T2 TO-39 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance

 0.5. Size:253K  international rectifier
 irfb7430.pdf

StrongIRFETTM IRFB7430PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D VDSS 40V l Battery powered circuits RDS(on) typ. 1.0m l Half-bridge and full-bridge topologies l Synchronous rectifier applications max. 1.3m G l Resonant mode power supplies ID (Silicon Limited) 409A l OR-ing and redundant power switches S ID (

 0.6. Size:125K  international rectifier
 irhnj7430se.pdf

PD - 93830A IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL RADIATION HARDENED REF MIL-PRF-19500/676 POWER MOSFET RAD Hard HEXFET TECHNOLOGY SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7430SE 100K Rads (Si) 1.65 4.5A JANSR2N7466U3 SMD-0.5 International Rectifier s RADHardTM HEXFET MOSFET technology provides high pe

 0.7. Size:253K  international rectifier
 irfb7430pbf.pdf

StrongIRFETTM IRFB7430PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D VDSS 40V l Battery powered circuits RDS(on) typ. 1.0m l Half-bridge and full-bridge topologies l Synchronous rectifier applications max. 1.3m G l Resonant mode power supplies ID (Silicon Limited) 409A l OR-ing and redundant power switches S ID (

 0.8. Size:486K  vishay
 si7430dp.pdf

Si7430DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.045 at VGS = 10 V 26 Extremely Low Qgd for Reduced dV/dt, Qgd and 150 23 nC Shoot-Through 0.047 at VGS = 8 V 25 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS

 0.9. Size:217K  diodes
 dmg7430lfg.pdf

DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 11m @ VGS = 10V 10.5A Occupies just 33% of the board area occupied by SO-8 enabling

 0.10. Size:162K  secos
 ssp7430n.pdf

SSP7430N 17 A, 30 V, RDS(ON) 13 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

 0.11. Size:147K  aosemi
 aon7430l.pdf

AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and (VGS = 10V) ID = 20A general purpose applications. (VGS = 10V) RDS(ON)

 0.12. Size:153K  aosemi
 aon7430.pdf

AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and ID = 34A (VGS = 10V) general purpose applications. RDS(ON)

 0.13. Size:393K  aosemi
 aons74306.pdf

AONS74306 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 370A Low Gate Charge RDS(ON) (at VGS=10V)

 0.14. Size:396K  aosemi
 aons74304.pdf

AONS74304 30V N-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 440A Low Gate Charge RDS(ON) (at VGS=10V)

 0.15. Size:323K  analog power
 am7430n.pdf

Analog Power AM7430N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 13 @ VGS = 10V 16 Low thermal impedance 30 20 @ VGS = 4.5V 13 Fast switching speed Typical Applications DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 0.16. Size:702K  agertech
 atm7430ndh.pdf

ATM7430NDH N-Channel Fast Switching MOSFET Drain-Source Voltage 30V Continuous Drain Current 10.5A Description DFN3030 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features Low RDS(ON) ensures on state losses are minimized Small form fa