7430 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN-Channel Enhancement Mode Power MOSFET 743030V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS (V) = 30VID = 34A (VGS = 10V)RDS(ON)

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

PD - 91863BIRHF7430SEJANSR2N7464T2500V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/676POWER MOSFETRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (TO-39)Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHF7430SE 100K Rads (Si) 1.65 2.6A JANSR2N7464T2TO-39International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance

StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (

PD - 93830AIRHNJ7430SEJANSR2N7466U3500V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/676POWER MOSFETRAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-0.5)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7430SE 100K Rads (Si) 1.65 4.5A JANSR2N7466U3SMD-0.5International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high pe

StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (

Si7430DPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.045 at VGS = 10 V 26 Extremely Low Qgd for Reduced dV/dt, Qgd and150 23 nCShoot-Through0.047 at VGS = 8 V 25 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8 Compliant to RoHS

DMG7430LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 11m @ VGS = 10V 10.5A Occupies just 33% of the board area occupied by SO-8 enabling

SSP7430N 17 A, 30 V, RDS(ON) 13 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

AON7430LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30VThis device is suitable for high side switch in SMPS and (VGS = 10V)ID = 20Ageneral purpose applications. (VGS = 10V)RDS(ON)

AON743030V N-Channel MOSFETGeneral Description FeaturesThe AON7430 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.VDS (V) = 30VThis device is suitable for high side switch in SMPS andID = 34A (VGS = 10V)general purpose applications.RDS(ON)

AONS7430630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 370A Low Gate Charge RDS(ON) (at VGS=10V)

AONS7430430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 440A Low Gate Charge RDS(ON) (at VGS=10V)

Analog Power AM7430NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)13 @ VGS = 10V16 Low thermal impedance 3020 @ VGS = 4.5V13 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

ATM7430NDHN-Channel Fast Switching MOSFETDrain-Source Voltage: 30V Continuous Drain Current: 10.5ADescriptionDFN3030This MOSFET has been designed to minimize the on-state resistanceand yet maintain superior switching performance, making it ideal forhigh efficiency power management applications.Features Low RDS(ON) ensures on state losses are minimized Small form fa