7506 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDPDFN 3x3 Plastic-Encapsulate MOSFETS 7506N-Channel Enhancement Mode Power MOSFETDFN 3x3_EPFeatures 30V/30A, Top View Bottom View RDS (ON) =10m(Typ.)@VGS=10V RDS (ON) =15m(Typ.)@VGS=4.5V Super High Dense Cell DesignPin 1 Fast Switching Speed Low gate ChargeEquivalent CircuitTop View 100% avalanche t

AON750630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

PD - 9.1268FIRF7506HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state resis

BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 75 Afeatures very low on-state

PD - 95696IRF7506PbF Lead-Freewww.irf.com9/2/04IRF7506PbF2 www.irf.comIRF7506PbFwww.irf.com 3IRF7506PbF4 www.irf.comIRF7506PbFwww.irf.com 5IRF7506PbF6 www.irf.comIRF7506PbFMicro8 Package OutlineLEAD ASSIGNMENTSINCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91 1.11A1 .004 .008 0.10 0.208 7 6 5 8 7 6 5 B

This product complies with the RoHS Directive (EU 2002/95/EC).DSA7506Silicon PNP epitaxial planar typeFor low frequency amplificationDSA8506 in MiniP3 type package Package Code Features MiniP3-F2-B Low collector-emitter saturation voltage VCE(sat)Package dimension clicks here. Click! Contributes to miniaturization of sets, mount area reduction Eco-fr

CSD17506Q5Awww.ti.com SLPS304B DECEMBER 2010 REVISED JUNE 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17506Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 8.3 nC Avalanche RatedQgd Gate Charge Gat

AON750630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

SM7506NF/SM7506NFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 75V/170A**, RDS(ON)= 4.3m(max.) @ VGS= 10V Reliable and RuggedS SD D Lead Free and Green Devices Available G G(RoHS Compliant) Top View of TO-220-FP Top View of TO-220DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrder

SM7506NSW N-Channel Enhancement Mode MOSFETFeatures Pin Description 75V/170A**, RDS(ON)= 4.3m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant) Top View of TO-247DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM7506

SM7506NF/SM7506NFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 75V/170A**, RDS(ON)= 4.3m (max.) @ VGS= 10V Reliable and RuggedS SD D Lead Free and Green Devices Available G G(RoHS Compliant) Top View of TO-220-FP Top View of TO-220DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Mar

SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7506FeaturesGeneration V TechnologyUltra Low On-ResistanceDual P-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitContinuous Drain Current, VGS @-10V@TA =25 ID -1.7Continuous Drain Current, VGS @-10V@TA =70 ID -1.4 A

isc N-Channel MOSFET Transistor BUK7506-55AFEATURESStatic drain-source on-resistance:RDS(on) 6.3mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour