SSM3K72KFS Todos los transistores

 ..1. Size:228K  toshiba
 ssm3k72kfs.pdf

SSM3K72KFS MOSFETs Silicon N-Channel MOS SSM3K72KFS 1. Applications High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit 1 Gate 2 Source

 7.1. Size:202K  toshiba
 ssm3k72ctc.pdf

SSM3K72CTC MOSFETs Silicon N-Channel MOS SSM3K72CTC SSM3K72CTC SSM3K72CTC SSM3K72CTC 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD protected gate (2) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (@VGS = 10 V) RDS(ON) = 3.1 (typ.) (@VGS = 5 V) RDS(ON) = 3.2

 8.1. Size:153K  toshiba
 ssm3k7002fu.pdf

SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications Unit mm 2.1 0.1 Small package 1.25 0.1 Low ON resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) Ron = 3.0 (max) (@VGS = 10 V) 1 2 3 Maximum Ratings (Ta = 25 C) Characteris

 8.2. Size:167K  toshiba
 ssm3k7002afu.pdf

SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Unit mm Analog Switch Applications Small package 2.1 0.1 Low ON-resistance Ron = 3.3 (max) (@VGS = 4.5 V) 1.25 0.1 Ron = 3.2 (max) (@VGS = 5 V) Ron = 3.0 (max) (@VGS = 10 V) 1 Absolute Maximum Ratings (Ta = 25 C) 23 Characteri

 8.3. Size:165K  toshiba
 ssm3k7002af.pdf

SSM3K7002AF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AF High-Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 Small package +0.25 1.5-0.15 Low ON-resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) 1 Ron = 3.0 (max) (@VGS = 10 V) 2 3 Absolute Maximum Ratings (Ta = 25 C)

 8.4. Size:205K  toshiba
 ssm3k7002cfu.pdf

SSM3K7002CFU MOSFETs Silicon N-Channel MOS SSM3K7002CFU SSM3K7002CFU SSM3K7002CFU SSM3K7002CFU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

 8.5. Size:219K  toshiba
 ssm3k7002bfu.pdf

SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics

 8.6. Size:215K  toshiba
 ssm3k7002bf.pdf

SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications Unit mm Small package +0.5 2.5-0.3 Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) +0.25 1.5-0.15 RDS(ON) = 2.6 (max) (@VGS = 5 V) RDS(ON) = 2.1 (max) (@VGS = 10 V) 1 Absolute Maximum Rating

 8.7. Size:183K  toshiba
 ssm3k7002bfs.pdf

SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics

 8.8. Size:271K  toshiba
 ssm3k7002f.pdf

SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 Small package +0.25 1.5-0.15 Low ON-resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) 1 Ron = 3.0 (max) (@VGS = 10 V) 2 3 Maximum Ratings (Ta = 25 C) Charact

 8.9. Size:888K  cn vbsemi
 ssm3k7002f.pdf

SSM3K7002F www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G