T2N7002BK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

T2N7002BKMOSFETs Silicon N-Channel MOST2N7002BKT2N7002BKT2N7002BKT2N7002BK1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast swi

CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast sw

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

Eternal Semiconductor Inc. ET2N7002KN-Channel High Density Trench MOSFET (60V,0.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ2.5 @ VGS = 10V, ID=0.5A60V 500mA3.0 @ VGS = 5V, ID=0.05AFeatures High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV LeadPb-free and halogen-freeDrainET2N7002K Pin Assignment & Symbo

WST2N7002 N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mAof the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full

WST2N7002A N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mAexcellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

WST2N7002K N-Ch MOSFETProduct SummeryGeneral Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mAgate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with