T2N7002BK Todos los transistores

 ..1. Size:236K  toshiba
 t2n7002bk.pdf

T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

 7.1. Size:590K  toshiba
 t2n7002ak.pdf

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

 7.2. Size:209K  champion
 cmt2n7002 cmt2n7002wg.pdf

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast swi

 7.3. Size:172K  champion
 cmt2n7002k.pdf

CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast sw

 7.4. Size:199K  champion
 cmt2n7002ag.pdf

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

 7.5. Size:856K  eternal
 et2n7002k.pdf

Eternal Semiconductor Inc. ET2N7002K N-Channel High Density Trench MOSFET (60V,0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Typ 2.5 @ VGS = 10V, ID=0.5A 60V 500mA 3.0 @ VGS = 5V, ID=0.05A Features High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV Lead Pb -free and halogen-free Drain ET2N7002K Pin Assignment & Symbo

 7.6. Size:1382K  winsok
 wst2n7002.pdf

WST2N7002 N-Ch MOSFET General Description Product Summery The WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mA of the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full

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 wst2n7002a.pdf

WST2N7002A N-Ch MOSFET General Description Product Summery The WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mA excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

 7.8. Size:876K  winsok
 wst2n7002k.pdf

WST2N7002K N-Ch MOSFET Product Summery General Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mA gate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with