TPH1R712MD Todos los transistores

 

TPH1R712MD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPH1R712MD
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 2010 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

TPH1R712MD Datasheet (PDF)

 ..1. Size:773K  toshiba
 tph1r712md.pdf pdf_icon

TPH1R712MD

TPH1R712MDMOSFETs Silicon P-Channel MOS (U-MOS)TPH1R712MDTPH1R712MDTPH1R712MDTPH1R712MD1. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.35 m (typ.) (VGS = -4.5 V)(2) Low leakage current: IDS

 9.1. Size:236K  toshiba
 tph1r403nl.pdf pdf_icon

TPH1R712MD

TPH1R403NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1R403NLTPH1R403NLTPH1R403NLTPH1R403NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 10.6 nC (typ.)(3) Low drain-source on-resist

 9.2. Size:451K  toshiba
 tph1r005pl.pdf pdf_icon

TPH1R712MD

TPH1R005PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1R005PLTPH1R005PLTPH1R005PLTPH1R005PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 24 nC (typ.)(3) Small output charge: Qoss =

 9.3. Size:674K  toshiba
 tph1r306pl.pdf pdf_icon

TPH1R712MD

TPH1R306PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1R306PLTPH1R306PLTPH1R306PLTPH1R306PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 22 nC (typ.)(3) Small out

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFP4N60P3 | SMP40N10 | AM1541CE | DMC2041UFDB | SE80130GA | IXFN64N60P | IRF624A

 

 
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