TPH3R704PL Todos los transistores

 

TPH3R704PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPH3R704PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 81 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 92 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 5.3 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

TPH3R704PL Datasheet (PDF)

 ..1. Size:465K  toshiba
tph3r704pl.pdf pdf_icon

TPH3R704PL

TPH3R704PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH3R704PLTPH3R704PLTPH3R704PLTPH3R704PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 8.1 nC (typ.)(3) Small ou

 7.1. Size:675K  toshiba
tph3r70apl.pdf pdf_icon

TPH3R704PL

TPH3R70APLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH3R70APLTPH3R70APLTPH3R70APLTPH3R70APL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 21 nC (typ.)(3) Small out

 9.1. Size:237K  toshiba
tph3r203nl.pdf pdf_icon

TPH3R704PL

TPH3R203NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH3R203NLTPH3R203NLTPH3R203NLTPH3R203NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 5.2 nC (typ.)(3) Low drain-source on-resista

 9.2. Size:464K  toshiba
tph3r506pl.pdf pdf_icon

TPH3R704PL

TPH3R506PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH3R506PLTPH3R506PLTPH3R506PLTPH3R506PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 16 nC (typ.)(3) Small out

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