WSD2075DN Todos los transistores

 

WSD2075DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD2075DN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 54 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN3X3A-8-EP
 

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WSD2075DN Datasheet (PDF)

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WSD2075DN

WSD2075DNDual P-Ch MOSFET Product SummeryGeneral Description The WSD2075DN is the highest performance BVDSS RDSON ID trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON -20V 9.5m -36Aand gate charge for most of the synchronous buck converter applications . Applications The WSD2075DN meet the RoHS and Green Product requirement 100%

 9.1. Size:1808K  winsok
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WSD2075DN

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

 9.2. Size:1030K  winsok
wsd20l120dn56.pdf pdf_icon

WSD2075DN

WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

 9.3. Size:2643K  winsok
wsd2018dn22.pdf pdf_icon

WSD2075DN

WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

Otros transistores... WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 , WSD2050DN , WSD2054DN22 , WSD2068 , STF13NM60N , WSD2090DN56 , WSD2098 , WSD20L120DN56 , WSD20L50DN , WSD20L70DN , WSD20L75DN , WSD30100DN56 , WSD30140DN56 .

History: WMP80R1K5S | WNMD2153 | HSBG2103 | MTB340N11N6 | IPP062NE7N3 | WMP08N65C4 | IRLU8726

 

 
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