WSD2075DN Todos los transistores

 

WSD2075DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD2075DN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 23 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: DFN3X3A-8-EP

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WSD2075DN datasheet

 ..1. Size:2306K  winsok
wsd2075dn.pdf pdf_icon

WSD2075DN

WSD2075DN Dual P-Ch MOSFET Product Summery General Description The WSD2075DN is the highest performance BVDSS RDSON ID trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON -20V 9.5m -36A and gate charge for most of the synchronous buck converter applications . Applications The WSD2075DN meet the RoHS and Green Product requirement 100%

 9.1. Size:1808K  winsok
wsd2018adn22.pdf pdf_icon

WSD2075DN

WSD2018ADN22 N-Ch MOSFET General Description Product Summery The WSD2018ADN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 20V 9.5m 11A excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

 9.2. Size:1030K  winsok
wsd20l120dn56.pdf pdf_icon

WSD2075DN

WSD20L120DN56 P-Ch MOSFET General Description Product Summery The WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120A charge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

 9.3. Size:2643K  winsok
wsd2018dn22.pdf pdf_icon

WSD2075DN

WSD2018DN22 N-Ch MOSFET General Description Product Summery The WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m (MAX) 12A gate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

Otros transistores... WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 , WSD2050DN , WSD2054DN22 , WSD2068 , IRFP250 , WSD2090DN56 , WSD2098 , WSD20L120DN56 , WSD20L50DN , WSD20L70DN , WSD20L75DN , WSD30100DN56 , WSD30140DN56 .

History: IRLU8726 | BLM2302 | WMK14N70C4 | 2SK1647S | VP0300M | BLM7002K | VBZM8N50

 

 

 

 

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