WSD20L70DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD20L70DN
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 VQgⓘ - Carga de la puerta: 70 nC
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 927 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
Paquete / Cubierta: DFN3X3-8
Búsqueda de reemplazo de MOSFET WSD20L70DN
WSD20L70DN Datasheet (PDF)
wsd20l70dn.pdf
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WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy
wsd20l50dn.pdf
WSD20L50DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
