WSD20L75DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WSD20L75DNP-Ch MOSFET Product SummeryGeneral Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75Aused in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low RdsonDFN3X

WSD20L70DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70Agate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu

WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

WSD20L50DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS