WSD3023DN56 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD3023DN56
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 5.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8.6 nS
Cossⓘ - Capacitancia de salida: 95 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
Encapsulados: DFN5X6C-8-EP2
Búsqueda de reemplazo de WSD3023DN56 MOSFET
- Selecciónⓘ de transistores por parámetros
WSD3023DN56 datasheet
..1. Size:2847K winsok
wsd3023dn56.pdf 
WSD3023DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14A RDSON and gate charge for most of the -12A -30V 23m synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio
8.1. Size:870K winsok
wsd3028dn.pdf 
WSD3028DN N-Ch MOSFET General Description Product Summery The WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19A gate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree
8.2. Size:1066K winsok
wsd3020dn.pdf 
WSD3020DN Dual N-Ch MOSFET General Description Product Summery The WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21A and gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron
9.1. Size:1410K winsok
wsd30l20dn.pdf 
WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast
9.2. Size:4767K winsok
wsd3067dn56.pdf 
WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application
9.3. Size:611K winsok
wsd30l90dn56.pdf 
WSD30L90DN56 P-Ch MOSFET General Description Product Summery The WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90A charge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load
9.4. Size:905K winsok
wsd3030dn.pdf 
WSD3030DN N-Ch MOSFET General Description Product Summery The WSD3030DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 10m 34A gate charge for most of the synchronous buck converter applications . Applications The WSD3030DN meet the RoHS and Green High Frequency Point-of-Load Synchronous
9.5. Size:2118K winsok
wsd3075dn56.pdf 
WSD3075DN56 N-Ch MOSFET General Description Product Summery The WSD3075DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75A gate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar
9.6. Size:625K winsok
wsd3066dn.pdf 
WSD3066DN N-Ch MOSFET General Description Product Summery The WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45A excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous
9.7. Size:1045K winsok
wsd30100dn56.pdf 
WSD30100DN56 N-Ch MOSFET General Description Product Summery The WSD30100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 3.3m 100A gate charge for most of the synchronous buck converter applications . Applications The WSD30100DN56 meet the RoHS and Green Product requirement 100% EAS
9.8. Size:595K winsok
wsd3070dn.pdf 
WSD3070DN N-Ch MOSFET Features Product Summery 100% UIS + R Tested g BVDSS RDSON ID Avalanche Rated 25V 3.4m (max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices Available DFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings (TA = 25 C Unl
9.9. Size:1390K winsok
wsd3056dn.pdf 
WSD3056DN Dual N-Ch MOSFET Product Summery General Description BVDSS RDSON ID 30V 13m 35A The WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications POL Applications MB / VGA / Vcore The WSD3056DN meet the RoHS and Gre
9.10. Size:598K winsok
wsd3042dn56.pdf 
WSD3042DN56 N-Ch MOSFET Features Pin Description 30V/40A, RDS(ON)= 10.8m (max.) @ VGS=10V RDS(ON)= 12m (max.) @ VGS=4.5V RDS(ON)= 16m (max.) @ VGS=2.5V 100% UIS+Rg tested Reliable and Rugged DFN5x6A-8_EP Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
9.11. Size:2165K winsok
wsd3095dn56.pdf 
WSD3095DN56 N-Channel MOSFET General Description Product Summery The WSD3095DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 95A 30V 3.5m charge for most of the synchronous buck converter applications . The WSD3095DN56 meet the RoHS and Green Applications Product requirement 100% E
9.12. Size:919K winsok
wsd30l120dn56.pdf 
WSD30L120DN56 P-Ch MOSFET General Description Product Summery The WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120A charge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L
9.13. Size:821K winsok
wsd30l30dn.pdf 
WSD30L30DN P-Ch MOSFET General Description Product Summery The WSD30L30DN is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 15m -32A gate charge for most of the synchronous buck converter applications . Applications The WSD30L30DN meet the RoHS and Green Product requirement , 100% EAS guara
9.14. Size:3084K winsok
wsd3069dn56.pdf 
WSD3069DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A 30V 15m gate charge for most of the synchronous buck converter applications . -30V 15m -16A The WSD3069DN56 meet the RoHS and Green Applic
9.15. Size:733K winsok
wsd30l60dn56.pdf 
WSD30L60DN56 P-Ch MOSFET Product Summery Features -30V/-45A, RDS(ON) = 12m (max.) @ VGS =-10V RDS(ON) = 17m (max.) @ VGS =-6V RDS(ON) = 21m (max.) @ VGS =-4.5V Reliable and Rugged Lead Free and Green Devices Available DFN5X6A-8_EP (RoHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings (T
9.16. Size:788K winsok
wsd3050dn.pdf 
WSD3050DN N-Ch MOSFET General Description Product Summery The WSD3050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 7m 30V 50A gate charge for most of the synchronous buck converter applications . Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guarante
9.17. Size:1429K winsok
wsd30160dn56.pdf 
WSD30160DN56 N-Ch MOSFET Product Summery General Description The WSD30160DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate 30V 1.9m 120A charge for most of the synchronous buck converter applications . Applications The WSD30160DN56 meet the RoHS and Green Product requirement , 100% EA
9.18. Size:834K winsok
wsd3045dn.pdf 
WSD3045DN N-Ch and P-Channel MOSFET General Description Product Summery The WSD3045DN is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 10.5m 30V 18A RDSON and gate charge for most of the synchronous buck converter applications . -15.3A -30V 24m The WSD3045DN meet the RoHS and Green Product
9.19. Size:867K winsok
wsd30140dn56.pdf 
WSD30140DN56 N-Ch MOSFET Product Summery General Description The WSD30140DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate 30V 1.7m 85A charge for most of the synchronous buck converter applications . Applications The WSD30140DN56 meet the RoHS and Green Product requirement , 100% EAS
9.20. Size:801K winsok
wsd30l40dn.pdf 
WSD30L40DN P-Ch MOSFET General Description Product Summery The WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40A gate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua
9.21. Size:1074K winsok
wsd30150dn56.pdf 
WSD30150DN56 N-Ch MOSFET Product Summery General Description The WSD30150DN56 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of 30V 1.8m 150A the synchronous buck converter applications . Applications The WSD30150DN56 meet the RoHS and Green Product requirement , 100% EAS
Otros transistores... WSD20L50DN
, WSD20L70DN
, WSD20L75DN
, WSD30100DN56
, WSD30140DN56
, WSD30150DN56
, WSD30160DN56
, WSD3020DN
, STF13NM60N
, WSD3028DN
, WSD3030DN
, WSD3042DN56
, WSD3045DN
, WSD3050DN
, WSD3056DN
, WSD3066DN
, WSD3067DN56
.
History: WSD4070DN
| WSF3036