WSD3023DN56 Todos los transistores

 

WSD3023DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD3023DN56
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
   Paquete / Cubierta: DFN5X6C-8-EP2
 

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WSD3023DN56 Datasheet (PDF)

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WSD3023DN56

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

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WSD3023DN56

WSD3028DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19Agate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree

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WSD3023DN56

WSD3020DNDual N-Ch MOSFETGeneral Description Product SummeryThe WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21Aand gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron

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WSD3023DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

Otros transistores... WSD20L50DN , WSD20L70DN , WSD20L75DN , WSD30100DN56 , WSD30140DN56 , WSD30150DN56 , WSD30160DN56 , WSD3020DN , IRF2807 , WSD3028DN , WSD3030DN , WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 .

History: IRF7314 | SNN2515D | SRT10N230HD56

 

 
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