WSD3023DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD3023DN56
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.6 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
Paquete / Cubierta: DFN5X6C-8-EP2
Búsqueda de reemplazo de MOSFET WSD3023DN56
WSD3023DN56 Datasheet (PDF)
wsd3023dn56.pdf
WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio
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wsd30l20dn.pdf
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wsd3067dn56.pdf
WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application
wsd30l90dn56.pdf
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wsd3066dn.pdf
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wsd30100dn56.pdf
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wsd3056dn.pdf
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wsd3095dn56.pdf
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wsd30l120dn56.pdf
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wsd3069dn56.pdf
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wsd30l60dn56.pdf
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wsd3050dn.pdf
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wsd30160dn56.pdf
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wsd30140dn56.pdf
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wsd30l40dn.pdf
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wsd30150dn56.pdf
WSD30150DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30150DN56 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of 30V 1.8m 150Athe synchronous buck converter applications . Applications The WSD30150DN56 meet the RoHS and Green Product requirement , 100% EAS
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