WSD3023DN56 Todos los transistores

 

WSD3023DN56 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD3023DN56

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.6 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm

Encapsulados: DFN5X6C-8-EP2

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WSD3023DN56 datasheet

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WSD3023DN56

WSD3023DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14A RDSON and gate charge for most of the -12A -30V 23m synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

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wsd3028dn.pdf pdf_icon

WSD3023DN56

WSD3028DN N-Ch MOSFET General Description Product Summery The WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19A gate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree

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wsd3020dn.pdf pdf_icon

WSD3023DN56

WSD3020DN Dual N-Ch MOSFET General Description Product Summery The WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21A and gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron

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wsd30l20dn.pdf pdf_icon

WSD3023DN56

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast

Otros transistores... WSD20L50DN , WSD20L70DN , WSD20L75DN , WSD30100DN56 , WSD30140DN56 , WSD30150DN56 , WSD30160DN56 , WSD3020DN , STF13NM60N , WSD3028DN , WSD3030DN , WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 .

History: WSD4070DN | WSF3036

 

 

 


History: WSD4070DN | WSF3036

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