WSD3050DN Todos los transistores

 

WSD3050DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD3050DN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: DFN3X3-8

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WSD3050DN datasheet

 ..1. Size:788K  winsok
wsd3050dn.pdf pdf_icon

WSD3050DN

WSD3050DN N-Ch MOSFET General Description Product Summery The WSD3050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 7m 30V 50A gate charge for most of the synchronous buck converter applications . Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guarante

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wsd3056dn.pdf pdf_icon

WSD3050DN

WSD3056DN Dual N-Ch MOSFET Product Summery General Description BVDSS RDSON ID 30V 13m 35A The WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications POL Applications MB / VGA / Vcore The WSD3056DN meet the RoHS and Gre

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3050DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3050DN

WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application

Otros transistores... WSD30150DN56 , WSD30160DN56 , WSD3020DN , WSD3023DN56 , WSD3028DN , WSD3030DN , WSD3042DN56 , WSD3045DN , 75N75 , WSD3056DN , WSD3066DN , WSD3067DN56 , WSD3069DN56 , WSD3070DN , WSD3075DN56 , WSD3095DN56 , WSD30L120DN56 .

History: VN0335N1 | WMJ12N105C2 | VS3622DP2 | NCE2305A | 5N20A | 2SJ175 | WMK11N80M3

 

 

 


History: VN0335N1 | WMJ12N105C2 | VS3622DP2 | NCE2305A | 5N20A | 2SJ175 | WMK11N80M3

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