WSD3066DN Todos los transistores

 

WSD3066DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD3066DN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.3 nS

Cossⓘ - Capacitancia de salida: 610 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm

Encapsulados: DFN3.3X3.3-8

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WSD3066DN datasheet

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wsd3066dn.pdf pdf_icon

WSD3066DN

WSD3066DN N-Ch MOSFET General Description Product Summery The WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45A excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous

 8.1. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3066DN

WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application

 8.2. Size:3084K  winsok
wsd3069dn56.pdf pdf_icon

WSD3066DN

WSD3069DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A 30V 15m gate charge for most of the synchronous buck converter applications . -30V 15m -16A The WSD3069DN56 meet the RoHS and Green Applic

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3066DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast

Otros transistores... WSD3020DN , WSD3023DN56 , WSD3028DN , WSD3030DN , WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , IRFB31N20D , WSD3067DN56 , WSD3069DN56 , WSD3070DN , WSD3075DN56 , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN .

 

 

 


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