WSD40120DN56G Todos los transistores

 

WSD40120DN56G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD40120DN56G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 1119 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: DFN5X6-8
     - Selección de transistores por parámetros

 

WSD40120DN56G Datasheet (PDF)

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WSD40120DN56G

WSD40120DN56G N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120Alow gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S

 2.1. Size:1153K  winsok
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WSD40120DN56G

WSD40120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g

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WSD40120DN56G

WSD4070DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4070DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 4.5m 68Aprovide excellent RDSON and gate charge for most of the synchronous Applications buck converter applications . The WSD4070DN meet the High Frequency Point-of-Load Synchronous RoHS

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WSD40120DN56G

WSD4098DN56Dual N-Ch MOSFETGeneral Description Product Summery The WSD4098DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 40V 7.8m 22Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4098DN56 meet the RoHS High Frequency Point-of-Load

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP11N10AK | BSS84KR

 

 
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