WSD40120DN56G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD40120DN56G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 1119 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Paquete / Cubierta: DFN5X6-8
Búsqueda de reemplazo de MOSFET WSD40120DN56G
WSD40120DN56G Datasheet (PDF)
wsd40120dn56g.pdf
WSD40120DN56G N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120Alow gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S
wsd40120dn56.pdf
WSD40120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g
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wsd4098dn56.pdf
WSD4098DN56Dual N-Ch MOSFETGeneral Description Product Summery The WSD4098DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 40V 7.8m 22Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4098DN56 meet the RoHS High Frequency Point-of-Load
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WSD40P10DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD40P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 78m -30Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD40P10DN56 meet the RoHS and High Frequency Point-of-Load Sy
wsd4023dn56.pdf
WSD4023DN56N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSD4023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 40V 16m 32Acharge for most of the synchronous buck converter -40V 30m -22Aapplications . The WSD4023DN56 meet the RoHS and Green Product r
wsd4038dn.pdf
WSD4038DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4038DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 40V 13m 38Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4038DN meet the RoHS and High Frequency Point-of-Load Synchronou
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wsd4062dn56.pdf
WSD4062DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD4062DN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with 40V 7.0mextreme high cell density , which provide 62Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4062DN56 meet the RoHS and Green Product requirement , 100% EAS
wsd4066dn.pdf
WSD4066DNDual N-Ch MOSFETGeneral Description Product Summery The WSD4066DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent 40V 17m 14ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4066DN meet the RoHS and High Frequency Point-of-Load Synch
wsd4080dn56.pdf
WSD4080DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A40V 4.5mcharge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E
wsd4050dn.pdf
WSD4050DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4050DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 7.4m 50Aprovide excellent RDSON and gate charge for most of the synchronous buck Applications converter applications . The WSD4050DN meet the RoHS High Frequency Point-of-Load Synchronous
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