ZVP4424G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVP4424G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8.8 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET ZVP4424G
ZVP4424G Datasheet (PDF)
zvp4424g.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
zvp4424gta zvp4424gtc.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
zvp4424a.pdf
P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V
zvp4424z.pdf
SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT
zvp4424zta.pdf
SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT
zvp4424astoa zvp4424astob zvp4424astz.pdf
P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V
Otros transistores... ZVP2120A , ZVP2120G , ZVP3306A , ZVP3306F , ZVP3310A , ZVP3310F , ZVP4105A , ZVP4424A , IRF1405 , 2N7000BU , 2N7000TA , 2N7002DW , 2N7002K , 2N7002KW , 2N7002MTF , 2N7002T , 2N7002V .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918