WSD60N10GDN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD60N10GDN56
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 362 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: DFN5X6
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WSD60N10GDN56 Datasheet (PDF)
wsd60n10gdn56.pdf
WSD60N10GDN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD60N10GDN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 100V 8.5m 60Acharge for most of the synchronous buck converter applications . Applications The WSD60N10GDN56 meet the RoHS and Green Power Management in TV C
wsd6056dn56.pdf
WSD6056DN56Dual N-Ch MOSFETGeneral Description Product Summery The WSD6056DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 60V 16m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD6056DN56 meet the High Frequency Point-of-Load Synchr
wsd6040dn56.pdf
WSD6040DN56 N-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON IDThe WSD6040DN56 is the highest performance trench N-Ch MOSFET with extreme high cell 60V 17.5m 36Adensity,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .Applications Secondary Side Synchronous RectificationThe WSD6040DN56 meet the RoHS and G
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