WSF15N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WSF15N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 170 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET WSF15N10

WSF15N10 Datasheet (PDF)

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wsf15n10.pdf

WSF15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 80m 15Afor most of the synchronous buck converter applications . Applications The WSF15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

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wsf15n10g.pdf

WSF15N10G N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10G uses advanced SGTMOS BVDSS RDSON ID technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche 75m 15A100Vcharacteristics. This device is specially designed to get better ruggedness and suitable to use in Applications Synchronous rectification applications Fast Swi

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wsf15n10a.pdf

WSF15N10A N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10A uses advanced trench technology and BVDSS RDSON ID design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. 100V 90m 15AFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and currentTO-252 Pin Configu

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wsf15p10.pdf

WSF15P10P-Ch MOSFETGeneral Description Product SummeryThe WSF15P10 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 150m -13Afor most of the synchronous buck converter applications . Applications The WSF15P10 meet the RoHS and Green High Frequency Point-of-Load Synchrono

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BUK9Y25-60E

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