WSF15N10G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WSF15N10G datasheet

..1. Size:1869K winsok
wsf15n10g.pdf pdf_icon

WSF15N10G N-Ch MOSFET Product Summery General Description The WSF15N10G uses advanced SGTMOS BVDSS RDSON ID technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche 75m 15A 100V characteristics. This device is specially designed to get better ruggedness and suitable to use in Applications Synchronous rectification applications Fast Swi

6.1. Size:2300K winsok
wsf15n10a.pdf pdf_icon

WSF15N10A N-Ch MOSFET Product Summery General Description The WSF15N10A uses advanced trench technology and BVDSS RDSON ID design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. 100V 90m 15A Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current TO-252 Pin Configu

6.2. Size:672K winsok
wsf15n10.pdf pdf_icon

WSF15N10 N-Ch MOSFET Product Summery General Description The WSF15N10 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 80m 15A for most of the synchronous buck converter applications . Applications The WSF15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

9.1. Size:903K winsok
wsf15p10.pdf pdf_icon

WSF15P10 P-Ch MOSFET General Description Product Summery The WSF15P10 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 150m -13A for most of the synchronous buck converter applications . Applications The WSF15P10 meet the RoHS and Green High Frequency Point-of-Load Synchrono

Otros transistores... WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G , WSF10N40 , WSF12N10 , WSF15N10 , WSF15N10A , IRFP250N , WSF15P10 , WSF18N15 , WSF20N06 , WSF20N20 , WSF20N20G , WSF20P03 , WSF28N06 , WSF30100 .