WSF20N20 Todos los transistores

 

WSF20N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSF20N20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

WSF20N20 Datasheet (PDF)

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WSF20N20

WSF20N20 N-Ch MOSFETGeneral Description Product SummeryThe WSF20N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 136m 20Aof the synchronous buck converter applications . Applications The WSF20N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed wit

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WSF20N20

WSF20N20G N-Ch MOSFETGeneral Description Product SummeryThe WSF20N20G is N-channel EnhancedBVDSS RDSON ID VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, 200V 0.12 18Aimprove switching . Applications performance and enhance the avalanche energy. The transistor can be used in various power Uninterruptible Power Supply(UP

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wsf20n06.pdf pdf_icon

WSF20N20

WSF20N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF20N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 35m 25Agate charge for most of the synchronous buck converter applications . Applications The WSF20N06 meet the RoHS and High Frequency Point-of-Load Synchronous Gree

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wsf20p03.pdf pdf_icon

WSF20N20

WSF20P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF20P03 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 26m -27Afor most of the small power switching and load switch applications. Applications The WSF20P03 meet the RoHS and Green Product requirement with full f

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History: TPC8035-H | PB606BA | RSF014N03TL | 2N5564 | IRFR9212 | 2SK2876-01MR | 2SK2530

 

 
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