WSF20P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSF20P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 27 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 12.6 nC
Tiempo de subida (tr): 14.8 nS
Conductancia de drenaje-sustrato (Cd): 194 pF
Resistencia entre drenaje y fuente RDS(on): 0.032 Ohm
Paquete / Cubierta: TO252
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WSF20P03 Datasheet (PDF)
wsf20p03.pdf
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WSF20P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF20P03 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 26m -27Afor most of the small power switching and load switch applications. Applications The WSF20P03 meet the RoHS and Green Product requirement with full f
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WSF20N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF20N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 35m 25Agate charge for most of the synchronous buck converter applications . Applications The WSF20N06 meet the RoHS and High Frequency Point-of-Load Synchronous Gree
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WSF20N20 N-Ch MOSFETGeneral Description Product SummeryThe WSF20N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 136m 20Aof the synchronous buck converter applications . Applications The WSF20N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed wit
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