WSF3012 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSF3012
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 7.4 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO252-4L
Búsqueda de reemplazo de MOSFET WSF3012
WSF3012 Datasheet (PDF)
wsf3012.pdf
WSF3012N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSF3012 is the highest performance trench N-ch BVDSS RDSON ID and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for 30V 18m 22Amost of the synchronous buck converter applications . -30V 30m -15AThe WSF3012 meet the RoHS and Green Product requirement 1
wsf30100d.pdf
WSF30100D N-Ch MOSFETGeneral Description Product SummeryThe WSF30100D is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most 30V 3.6m 100Aof the synchronous buck converter applications . The WSF30100D meet the RoHS and Green Product Applications requirement , 100% EAS guaranteed
wsf3013.pdf
WSF3013 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSF3013 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 14m 12Agate charge for most of the synchronous buck -11.5A-30V 23mconverter applications . The WSF3013 meet the RoHS and Green Applications
wsf30100.pdf
WSF30100 N-Ch MOSFETGeneral Description Product SummeryThe WSF30100 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most30V 2.5m 100Aof the synchronous buck converter applications . The WSF30100 meet the RoHS and Green Product Applications requirement , 100% EAS guaranteed wit
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STH185N10F3-2
History: STH185N10F3-2
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918