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WSF40N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSF40N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

WSF40N10A Datasheet (PDF)

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WSF40N10A

WSF40N10A N-Ch MOSFETGeneral Description Product SummeryThe WSF40N10A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 42m 31Agate charge for most of the synchronous buck converter applications . Applications The WSF40N10A meet the RoHS and Green High Frequency Point-of-Load Synchron

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WSF40N10A

WSF40N10 N-Ch MOSFETGeneral Description Product SummeryThe WSF40N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 32m 40Afor most of the synchronous buck converter applications . Applications The WSF40N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

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wsf40n06.pdf pdf_icon

WSF40N10A

WSF40N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF40N06 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 60V 20m 50Afor most of the synchronous buck converter applications . Applications The WSF40N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous

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wsf40p03.pdf pdf_icon

WSF40N10A

WSF40P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF40P03 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and-30V 18m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF40P03 meet the RoHS and GreenProduct requirement with full fun

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History: NTB6410AN | SDF1NA60

 

 
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