WSF50N10 Todos los transistores

 

WSF50N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSF50N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

WSF50N10 Datasheet (PDF)

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WSF50N10

WSF50N10 N-Ch MOSFETGeneral Description Product SummeryThe WSF50N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 22m 50Agate charge for most of the synchronous buck converter applications . Applications The WSF50N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

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WSF50N10

WSF50N10G N-Ch MOSFETDescription Product SummeryThe uses advanced SGT technologyBVDSS RDSON ID to provide excellent RDS(ON), low gate charge and 100V 40A13.8moperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protection or TO-252 Pin Configuration in other Switching application.Application Consumer electronic power supply Motor

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wsf50p10.pdf pdf_icon

WSF50N10

WSF50P10P-Ch MOSFETGeneral Description Product SummeryThe WSF50P10 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 40m -34Agate charge for most of the synchronous buck converter applications . Applications The WSF50P10 meet the RoHS and Green Power Management for Industrial DC / DC

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wsf50p04.pdf pdf_icon

WSF50N10

WSF50P04 P-Ch MOSFETGeneral Description Product SummeryThe WSF50P04 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON -40V 12m -40Aand gate charge for most of the synchronous buck converter applications . Applications The WSF50P04 meet the RoHS and Green High Frequency Point-of-Load Synchro

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History: NTB6410AN | SDF1NA60

 

 
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