WSP4099 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSP4099
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 7.5 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 98 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Paquete / Cubierta: SOP8
- Selección de transistores por parámetros
WSP4099 Datasheet (PDF)
wsp4099.pdf

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wsp4067.pdf

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WSP4016N-Channel MOSFETGeneral Description Product SummeryThe WSP4016 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 11.5m 15.5A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4016 meet the RoHS and White LED boost converters Green Product r
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WSP4068 N-Ch MOSFETGeneral Description Product SummeryThe WSP4068 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 40V 16.5m 10ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4068 meet the RoHS and Green Product requirement 100% EAS High Frequenc
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