WSP4099 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSP4099
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 7.5 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 98 pF
Resistencia entre drenaje y fuente RDS(on): 0.038 Ohm
Paquete / Cubierta: SOP8
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WSP4099 Datasheet (PDF)
wsp4099.pdf
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WSP4099Dual P-Channel MOSFETGeneral Description Product SummeryThe WSP4099 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent -40V 30m -6.5ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4099 meet the RoHS and Green High Frequency Point-of-Load Sy
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wsp4068.pdf
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WSP4068 N-Ch MOSFETGeneral Description Product SummeryThe WSP4068 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 40V 16.5m 10ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4068 meet the RoHS and Green Product requirement 100% EAS High Frequenc
wsp4067b.pdf
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WSP4067BN&P-Channel MOSFETGeneral Description Product SummeryThe WSP4067B is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide 40V 25m 6.0Aexcellent RDSON and gate charge for most -40V 40m -5.1Aof the synchronous buck converter applications . Applications The WSP4067B meet the RoHS and Green Product
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