WSP4807 Todos los transistores

 

WSP4807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSP4807
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 8.9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 10.4 nS
   Conductancia de drenaje-sustrato (Cd): 204 pF
   Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
   Paquete / Cubierta: SOP8

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WSP4807 Datasheet (PDF)

 ..1. Size:1290K  winsok
wsp4807.pdf

WSP4807 WSP4807

WSP4807 Dual P-Ch MOSFETFeatures SOP-8 Pin Configuration -30V/-8.9A,RDS(ON)=21m (max.) @ VGS=-10VRDS(ON)=32m (max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Available(8) (7) (6) (5)D2 D2D1 D1(RoHS Compliant)Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.S1 S2(1) (3) P-Channe

 8.1. Size:625K  winsok
wsp4805.pdf

WSP4807 WSP4807

WSP4805 Dual P-Ch MOSFETGeneral Description Product SummeryThe WSP4805 is the highest performance BVDSS RDSON ID trench Dual P-Ch MOSFET with extreme high cell density , which provide excellent -30V 16m -8.0ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4805 meet the RoHS and Green Product requirement , 100% EAS

 8.2. Size:2550K  winsok
wsp4800.pdf

WSP4807 WSP4807

WSP4800Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4800 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 32m 6.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4800 meet the RoHS and Power Management in Note book.Green Produ

 9.1. Size:1004K  winsok
wsp4882.pdf

WSP4807 WSP4807

WSP4882Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4882 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4882 meet the RoHS and Green High Frequency Point-of-Load Synch

 9.2. Size:1272K  winsok
wsp4888.pdf

WSP4807 WSP4807

WSP4888Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4888 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 13.5m 9.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4888 meet the RoHS and Green High Frequency Point-of-Load Synch

 9.3. Size:1208K  winsok
wsp4886.pdf

WSP4807 WSP4807

WSP4886Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4886 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 18m 30V 8.5A density , which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .Applicatio The WSP4886 meet the RoHS and Green High Frequency Point-of-Load Sync

 9.4. Size:1599K  winsok
wsp4812.pdf

WSP4807 WSP4807

WSP4812Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4812 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Application The WSP4812 meet the RoHS and High Frequency Point-of-Load Synchronou

 9.5. Size:704K  winsok
wsp4884.pdf

WSP4807 WSP4807

WSP4884Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4884 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 18.5m 30V 8.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4884 meet the RoHS and Green High Frequency Point-of-Load Syn

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