WSP9926A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSP9926A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 7.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.1 V
Carga de la puerta (Qg): 10.3 nC
Tiempo de subida (tr): 11.2 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET WSP9926A
WSP9926A Datasheet (PDF)
wsp9926a.pdf
WSP9926ADual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w
wsp9926b.pdf
WSP9926BDual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8Agate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit
wsp9936.pdf
WSP9936Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP9936 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 14m 8Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9936 meet the RoHS and Green Product requirement with fu
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