WST2011 Datasheet. Equivalente

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 wst2011.pdf

WST2011 Dual P-Ch MOSFET General Description Product Summery The WST2011 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate -3.2A -20V 80m charge for most of the small power switching and load switch applications. Applications The WST2011 meet the RoHS and Green Product requirement with f

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 wst2078.pdf

WST2078 N&P-Ch MOSFET General Description Product Summery The WST2078 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 20V 30m 5.6A density , which provide excellent RDSON and gate charge for most of the small power switching and -20V 65m -4.5A load switch applications. The WST2078 meet the RoHS and Green Product Applications

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 wst2026.pdf

WST2026 N-Channel MOSFET General Description Product Summery The WST2026 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 65m 2.0A gate charge for most of the small power switching and load switch applications. Applications The WST2026 meet the RoHS and Green Product requirement with full

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 wst2088a.pdf

WST2088A N-Ch MOSFET General Description Product Summery The WST2088A is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 20V 10.7m 7.5A gate charge for most of the small power switching and load switch applications. Applications The WST2088A meet the RoHS and Power switching application Gre

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 wst2004.pdf

WST2004 N-Ch MOSFET Features Product Summery RDSON (TYP.) BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m 20V 450m SOT-723 Pin Configuration Applications D D 3 3 Load/Power Switching Interfacing Switching Battery M

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 wst2005.pdf

WST2005 P-Ch MOSFET General Description Product Summery The H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6A device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr

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 wst2066.pdf

WST2066 Dual N-Ch MOSFET General Description Product Summery The WST2066 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 7.2A 20V 16m density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST2066 meet the RoHS and Green Product requirement with full

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 wst2088.pdf

WST2088 N-Ch MOSFET General Description Product Summery The WST2088 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 20V 8m 8.8A charge for most of the small power switching and load switch applications. Applications The WST2088 meet the RoHS and Green Power switching application Pro