WST2026 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WST2026
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 7.6 nC
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 87 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: SOT323
- Selección de transistores por parámetros
WST2026 Datasheet (PDF)
wst2026.pdf

WST2026N-Channel MOSFETGeneral Description Product SummeryThe WST2026 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 65m 2.0Agate charge for most of the small power switching and load switch applications. Applications The WST2026 meet the RoHS and Green Product requirement with full
wst2078.pdf

WST2078N&P-Ch MOSFETGeneral Description Product SummeryThe WST2078 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 20V 30m 5.6Adensity , which provide excellent RDSON and gate charge for most of the small power switching and -20V 65m -4.5Aload switch applications. The WST2078 meet the RoHS and Green Product Applications
wst2088a.pdf

WST2088AN-Ch MOSFETGeneral Description Product SummeryThe WST2088A is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 20V 10.7m 7.5Agate charge for most of the small power switching and load switch applications. Applications The WST2088A meet the RoHS and Power switching applicationGre
wst2011.pdf

WST2011 Dual P-Ch MOSFETGeneral Description Product SummeryThe WST2011 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate -3.2A-20V 80mcharge for most of the small power switching and load switch applications. Applications The WST2011 meet the RoHS and Green Product requirement with f
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXTY12N06T
History: IXTY12N06T



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