IRF223 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF223
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO204AA

Búsqueda de reemplazo de MOSFET IRF223

IRF223 Datasheet (PDF)

..1. Size:68K harris semi
irf220 irf221 irf222 irf223.pdf

Semiconductor IRF220, IRF221,IRF222, IRF2234.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,N-Channel Power MOSFETsOctober 1997Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2MOSFETs designed, tested, and guaranteed to withstand aspecified

9.1. Size:358K international rectifier
irf22n60c.pdf

RoHS IRF22N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET22A, 600VoltsDESCRIPTION The Nell IRF22N60 is a three-terminal silicon devicewith current conduction capability of 22A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 600V, and max. threshold voltage of 5 volts.G They are designed for use in applications such as

9.2. Size:141K international rectifier
irf2204.pdf

PD - 94434AUTOMOTIVE MOSFETIRF2204Typical ApplicationsHEXFET Power MOSFET Electric Power SteeringD 14 Volts Automotive Electrical SystemsVDSS = 40VFeatures Advanced Process TechnologyRDS(on) = 3.6m Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 210AS Fast Switching Repetitive Avalanche Allowed u

9.3. Size:258K international rectifier
irf2204pbf.pdf

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

9.4. Size:323K international rectifier
irf2204lpbf irf2204spbf.pdf

PD - 95491AIRF2204SPbFTypical Applications IRF2204LPbF Industrial Motor DriveHEXFET Power MOSFETDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mG 175C Operating Temperature Fast SwitchingID = 170A Repetitive Avalanche Allowed up to TjmaxS Lead-FreeDescriptionThis HEXFET Power MOSFET util

9.5. Size:258K infineon
irf2204pbf.pdf

9.6. Size:251K inchange semiconductor
irf2204s.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

9.7. Size:245K inchange semiconductor
irf2204.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204IIRF2204FEATURESStatic drain-source on-resistance:RDS(on) 3.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: