IRF223 Todos los transistores

 ..1. Size:68K  harris semi
 irf220 irf221 irf222 irf223.pdf

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2 MOSFETs designed, tested, and guaranteed to withstand a specified

 9.1. Size:358K  international rectifier
 irf22n60c.pdf

RoHS IRF22N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 22A, 600Volts DESCRIPTION The Nell IRF22N60 is a three-terminal silicon device with current conduction capability of 22A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 5 volts. G They are designed for use in applications such as

 9.2. Size:141K  international rectifier
 irf2204.pdf

PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications HEXFET Power MOSFET Electric Power Steering D 14 Volts Automotive Electrical Systems VDSS = 40V Features Advanced Process Technology RDS(on) = 3.6m Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 210A S Fast Switching Repetitive Avalanche Allowed u

 9.3. Size:258K  international rectifier
 irf2204pbf.pdf

PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.6m Dynamic dv/dt Rating G 175 C Operating Temperature ID = 210A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utilizes the las

 9.4. Size:323K  international rectifier
 irf2204lpbf irf2204spbf.pdf

PD - 95491A IRF2204SPbF Typical Applications IRF2204LPbF Industrial Motor Drive HEXFET Power MOSFET D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6m G 175 C Operating Temperature Fast Switching ID = 170A Repetitive Avalanche Allowed up to Tjmax S Lead-Free Description This HEXFET Power MOSFET util

 9.5. Size:251K  inchange semiconductor
 irf2204s.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2204S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 9.6. Size:245K  inchange semiconductor
 irf2204.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2204 IIRF2204 FEATURES Static drain-source on-resistance RDS(on) 3.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM