WST3424 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WST3424
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 6.4 nC
trⓘ - Tiempo de subida: 29.6 nS
Cossⓘ - Capacitancia de salida: 41 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET WST3424
WST3424 Datasheet (PDF)
wst3424.pdf
WST3424 N-Ch MOSFETGeneral Description Product SummeryThe WST3424 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 50m 4.4Afor most of the small power switching and load switch applications. Applications The WST3424 meet the RoHS and Green Product requirement with full funct
wst3420.pdf
WST3420N-Ch MOSFETGeneral Description Product SummeryThe WST3420 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 45m 4.4Afor most of the small power switching and load switch applications.Applications The WST3420 meet the RoHS and Green Product requirement with full functio
wst3426.pdf
WST3426 N-Ch MOSFETGeneral Description Product SummeryThe WST3426 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 60m 3.0Acharge for most of the small power switching and load switch applications. Applications The WST3426 meet the RoHS and Green Product requirement with full funct
wst3423.pdf
WST3423 P-Ch MOSFETGeneral Description Product SummeryThe WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9Afor most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu
wst3427.pdf
WST3427 P-Ch MOSFETGeneral Description Product SummeryThe WST3427 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 140m -2.5Acharge for most of the small power switching and load switch applications. Applications The WST3427 meet the RoHS and Green Product requirement with full fu
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