WCM2079 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WCM2079
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 81 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: SOP8L

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WCM2079 Datasheet (PDF)

..1. Size:908K willsemi
wcm2079.pdf

WCM2079WCM2079N- and P-Channel Complementary, 20V,MOSFET http://www.sh-willsemi.comV (V) Typical R ()DS DS(on)N-Channel 0.020@V =10VGS20 0.023@V =4.5VGS(4)(3)0.028@V =-10VP-Channel GS(2)-20 0.035@V =-4.5V (1)GSSOP-8LDescriptionsThe WCM2079 is the N-Channel and P-Channelenhancement MOS Field Effect Transistor as asingle package for DC-DC converter or le

9.1. Size:3465K willsemi
wcm2007.pdf

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

9.2. Size:1401K willsemi
wcm2002.pdf

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9.3. Size:1054K willsemi
wcm2001.pdf

WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo

9.4. Size:1090K willsemi
wcm2068.pdf

WCM2068WCM2068N- and P-Channel Complementary, 20V,MOSFET Http://www. sh- willsemi.comVDS (V) Typical RDS(on) ()0.033@ VGS=4.5VN-Channel0.037@ VGS=3.3V200.041@ VGS=2.5V0.085@VGS=- 4.5VP-ChannelSOT-23-6L0.097@VGS= -3.3V-200.110@VGS= -2.5VDescriptionsThe WCM2068 is the N-Channel andP-Channel enhancement MOS Field EffectTransistor as a single package for DC-DC

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