WPT2N31 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WPT2N31
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 1.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 13 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: DFN2X2-6L
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WPT2N31 Datasheet (PDF)
wpt2n31.pdf
WPT2N31 WPT2N31 Http://www.sh-willsemi.com Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N31 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product WPT2N31 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter satu
wpt2n32.pdf
WPT2N32 WPT2N32 Single, PNP, -30V, -1A, Power Transistor with Http//:www.willsemi.com 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. C 6 1 E C B G 5 2 DFeatures D3 S 4 Ultra low collec
wpt2n41.pdf
WPT2N41 WPT2N41 Single, PNP, -30V, -3A, Power Transistor Http://www.sh-willsemi.com Descriptions The WPT2N41 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and power management. Standard Product WPT2N41 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter saturation volta
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